Diamond semiconductor devices and associated methods

Abstract

Semiconductor devices and methods for making such devices are provided. One such method may include forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a crystal structure that is substantially epitaxially matched to the transparent diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer, and coupling a diamond substrate to at least one of the plurality of semiconductor layers such that the diamond support is oriented parallel to the transparent diamond layer. In one aspect such a method may further include electrically coupling at least one of a p-type electrode or an n-type electrode to at least one of the plurality of semiconductor layers.

1 . A semiconductor device, comprising:
 a diamond substrate;   a transparent diamond layer positioned parallel to the diamond substrate;   a plurality of semiconductor layers coupled between the transparent diamond layer and the diamond substrate.   
     
     
         2 . The device of  claim 1 , wherein the semiconductor device is an LED device and the plurality of semiconductor layers is a plurality of LED nitride layers. 
     
     
         3 . The device of  claim 1 , wherein the plurality of semiconductor layers is arranged in series between the diamond substrate and the transparent diamond layer. 
     
     
         4 . The device of  claim 1 , further comprising a SiC layer coupled to the transparent diamond layer and facing the plurality of semiconductor layers, such that the SiC layer is coupled to at least one of the plurality of semiconductor layers. 
     
     
         5 . The device of  claim 4 , wherein the SiC layer is a single crystal SiC layer. 
     
     
         6 . The device of  claim 5 , wherein the SiC layer has a crystal lattice that is substantially epitaxially matched to the transparent diamond layer. 
     
     
         7 . The device of  claim 5 , wherein the SiC layer has a crystal lattice that is substantially epitaxially matched to at least one of the semiconductor layers. 
     
     
         8 . The device of  claim 1 , further comprising at least one of a p-type electrode or an n-type electrode electrically coupled to at least one of the semiconductor layers. 
     
     
         9 . The device of  claim 8 , wherein the diamond substrate is p-type doped, and the p-type electrode is the p-type doped diamond substrate. 
     
     
         10 . The device of  claim 9 , wherein the diamond substrate is doped with boron to form the p-type doped diamond substrate. 
     
     
         11 . The device of  claim 1 , wherein the plurality of semiconductor layers includes at least one member selected from the group consisting of silicon germanium, gallium arsenide, gallium nitride, germanium, zinc sulfide, gallium phosphide, gallium antimonide, gallium indium arsenide phosphide, aluminum phosphide, aluminum arsenide, aluminum gallium arsenide, gallium nitride, boron nitride, aluminum nitride, indium arsenide, indium phosphide, indium antimonide, indium nitride, and combinations thereof. 
     
     
         12 . The device of  claim 11 , wherein at least one of the semiconductor layers is gallium nitride. 
     
     
         13 . The device of  claim 11 , wherein at least one of the semiconductor layers is aluminum nitride. 
     
     
         14 . A method of making a semiconductor device, comprising:
 forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a crystal structure that is substantially epitaxially matched to the transparent diamond layer;   depositing epitaxially at least one of a plurality of semiconductor layers on the SiC layer opposite the transparent diamond layer; and   coupling a diamond substrate to at least one of the plurality of semiconductor layers such that the diamond substrate is oriented parallel to the transparent diamond layer, and the plurality of semiconductor layers are located between the transparent diamond layer and the diamond substrate.   
     
     
         15 . The method of  claim 14 , further comprising electrically coupling at least one of a p-type electrode or an n-type electrode to at least one of the plurality of semiconductor layers. 
     
     
         16 . The method of  claim 14 , wherein the plurality of semiconductor layers includes at least one member selected from the group consisting of silicon germanium, gallium arsenide, gallium nitride, germanium, zinc sulfide, gallium phosphide, gallium antimonide, gallium indium arsenide phosphide, aluminum phosphide, aluminum arsenide, aluminum gallium arsenide, gallium nitride, boron nitride, aluminum nitride, indium arsenide, indium phosphide, indium antimonide, indium nitride, and combinations thereof. 
     
     
         17 . The method of  claim 14 , wherein the semiconductor layer is gallium nitride. 
     
     
         18 . The method of  claim 14 , wherein the semiconductor layer is aluminum nitride.