Silicon electrode plate for plasma etching

Abstract

[Problems] To provide a silicon electrode plate for plasma etching that suppresses the unevenness of the surface caused by plasma etching so as to ensure uniform etching. [Means for Solving the Problems] The silicon electrode plate for plasma etching is constituted by single-crystal silicon in which B and Al have been added as dopants, wherein the concentration of Al is equal to or greater than 1×10 13 atoms/cm 3 . In the silicon electrode plate for plasma etching, the electrical characteristic of single-crystal silicon is made uniform in a plane. Thus, the occurrence of unevenness of the surface may be minimized when the surface is depleted during plasma etching, and the occurrence of cracks may be suppressed.

1 . A silicon electrode plate for plasma etching,
 wherein the silicon electrode plate is constituted by single-crystal silicon in which B and Al have been added as dopants and the concentration of Al is equal to or greater than 1×10 13  atoms/cm 3 .   
     
     
         2 . The silicon electrode plate for plasma etching according to  claim 1 , wherein the concentration of Al is equal to or less than 5×10 13  atoms/cm 3 .