Multi-selective polishing slurry composition and a semiconductor element production method using the same

Abstract

Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.

1 . A method for producing a semiconductor device, the method comprising:
 forming device patterns including a silicon film at the uppermost part of the device patterns on a substrate including a first area and a second area, the device patterns on the first area having a density higher than that of the device patterns on the second area;   forming a first silicon oxide film on the device patterns;   forming a silicon nitride film on the silicon oxide film;   forming a second silicon oxide film on the silicon nitride film; and   chemically mechanically polishing the substrate using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent, and a silicon film passivation agent until the silicon film is exposed.   
     
     
         2 . The method of  claim 1 , wherein the first silicon oxide film has a thickness that can fill the gap between the device patterns on the first area. 
     
     
         3 . The method of  claim 1 , wherein the device patterns are gate patterns including a polysilicon film at the uppermost part. 
     
     
         4 . The method of  claim 1 , wherein the silicon nitride film passivation agent is poly(acrylic acid), poly(alkyl methacrylate), acrylamide, methacrylamide, or ethyl-methacrylamide. 
     
     
         5 . The method of  claim 1 , wherein the silicon film passivation agent is poly(vinyl pyrrolidone), vinylpyridine, or vinylpyrrolidone. 
     
     
         6 . The method of  claim 1 , wherein the polishing slurry composition is a mixture of a polishing agent suspension containing the polishing agent and an additive solution, and the additive solution contains 100 parts by weight of a solvent, 0.05 to 0.2 parts by weight of the silicon nitride film passivation agent, and 0.1 to 0.3 parts by weight of the silicon film passivation agent. 
     
     
         7 . A polishing slurry composition comprising:
 a mixture of 100 parts by weight of a polishing agent suspension containing a polishing agent and 40 to 120 parts by weight of an additive solution, wherein the additive solution contains 100 parts by weight of a solvent, 0.01 to 5 parts by weight of a silicon nitride film passivation agent, and 0.01 to 5 parts by weight of a silicon film passivation agent.   
     
     
         8 . The polishing slurry composition of  claim 7 , wherein the additive solution contains 100 parts by weight of a solvent, 0.05 to 0.2 parts by weight of a silicon nitride film passivation agent, and 0.1 to 0.3 parts by weight of a silicon film passivation agent. 
     
     
         9 . The polishing slurry composition of  claim 7 , wherein the silicon nitride film passivation agent is poly(acrylic acid), poly(alkyl methacrylate), acrylamide, methacrylamide, or ethyl-methacrylamide. 
     
     
         10 . The polishing slurry composition of  claim 7 , wherein the silicon film passivation agent is polyvinyl pyrrolidone), vinylpyridine, or vinylpyrrolidone.