Component for substrate processing apparatus and method of forming film on the component

Abstract

A forming method for an anodized aluminum film on a component for a substrate processing apparatus that subjects a substrate to plasma processing. The forming method includes connecting the component to the anode of a DC power source and immersing the component in a solution consisting mainly of an oxalic acid, and a step of immersing the component in the boiling water for 5 to 10 minutes. The anodized aluminum film grows toward the inside of the component. The amount of expansion and growth of the anodized aluminum film subjected to the semi-sealing process using the boiling water is smaller than the amount of expansion and growth of an anodized aluminum film subjected to a sealing process using water vapor. Further, generation of compressive force due to collision of crystal pillars in the anodized aluminum film is prevented when subjected to the semi-sealing process using the boiling water.

1 . A forming method for an anodized aluminum film on a component for a substrate processing apparatus that subjects a substrate to plasma processing, the forming method comprising:
 a step of connecting the component to the anode of a DC power source and immersing the component in a solution consisting mainly of an oxalic acid; and   a step of immersing the component in the boiling water for 5 to 10 minutes,   wherein:   the anodized aluminum film grows toward the inside of the component,   the amount of expansion and growth of the anodized aluminum film subjected to the semi-sealing process using the boiling water is smaller than the amount of expansion and growth of an anodized aluminum film subjected to a sealing process using water vapor, and   generation of compressive force due to collision of crystal pillars in the anodized aluminum film is prevented when subjected to the semi-sealing process using the boiling water.   
     
     
         2 . A forming method for an anodized aluminum film on a component for a substrate processing apparatus that subjects a substrate to plasma processing, the forming method comprising:
 a step of preparing the component for the substrate processing apparatus;   a step of connecting the component to the anode of a DC power source;   a step of immersing the component in a solution consisting mainly of an oxalic acid and applying voltage to the component from the DC power source;   a step of forming an anodized aluminum film on a surface of the component by subjecting the surface to an anodic oxidation process; and   a step of subjecting the component on which the anodized aluminum film is formed to a semi-sealing process using boiling water by immersing the component into boiling water,   wherein:   the anodized aluminum film grows toward the inside of the component,   the amount of expansion and growth of the anodized aluminum film subjected to the semi-scaling process using the boiling water is smaller than the amount of expansion and growth of an anodized aluminum film subjected to a sealing process using water vapor, and   generation of compressive force due to collision of crystal pillars in the anodized aluminum film is prevented when subjected to the semi-sealing process using the boiling water.   
     
     
         3 . The forming method for an anodized aluminum film as claimed in  claim 1 , wherein the component has at least thin holes, deep holes, and concave portions, and the anodized aluminum film is formed on all surfaces including the thin holes, deep holes, and concave portions by subjecting to the anodic oxidation process. 
     
     
         4 . The forming method for an anodized aluminum film as claimed in  claim 2 , wherein the component has at least thin holes, deep holes, and concave portions, and the anodized aluminum film is formed on all surfaces including the thin holes, deep holes, and concave portions by subjecting to the anodic oxidation process. 
     
     
         5 . The forming method for an anodized aluminum film as claimed in  claim 2 , wherein the semi-sealing process is performed for 5 to 10 minutes. 
     
     
         6 . The forming method for an anodized aluminum film as claimed in  claim 1 , further comprising:
 a step of forming a yttria film on a surface of the anodized aluminum film.   
     
     
         7 . The forming method for an anodized aluminum film as claimed in  claim 2 , further comprising:
 a step of forming a yttria film on a surface of the anodized aluminum film.