Plasma doping method and apparatus

Abstract

A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

1 - 16 . (canceled) 
     
     
         17 . A plasma doping apparatus comprising:
 a plasma doping chamber provided with a vacuum container, a sample electrode, gas supply means for supplying a gas to inside the vacuum container, exhausting means for exhausting the vacuum container, pressure control means for controlling pressure in the vacuum container, and plasma supply means for supplying plasma to a sample, and a sample electrode power source for supplying electric power to the sample electrode;   energy supplying means for applying energy to the sample; and   physical quantity measuring means for measuring a physical quantity of the sample.   
     
     
         18 . The plasma doping apparatus according to  claim 17 , wherein the plasma supplying means comprises a plasma source and a plasma high-frequency power source for supplying high-frequency electric power to the plasma source. 
     
     
         19 . The plasma doping apparatus according to  claim 17 , wherein the energy supplying means is heating means and the physical quantity measuring means is sheet resistance measuring means. 
     
     
         20 . The plasma doping apparatus according to  claim 17 , wherein the energy supplying means is an electron beam source for supplying an electron beam to the sample and the physical quantity measuring means is X-ray analyzing means comprising an X-ray detector. 
     
     
         21 . The plasma doping apparatus according to  claim 19 , wherein the heating means is a high-temperature furnace. 
     
     
         22 . The plasma doping apparatus according to  claim 19 , wherein the heating means is a laser annealing device which radiates laser light. 
     
     
         23 . The plasma doping apparatus according to  claim 19 , wherein the heating means is a laser annealing device which irradiates only a portion of the sample with laser light. 
     
     
         24 . The plasma doping apparatus according to  claim 19 , wherein the heating means is a lamp annealing device which radiates lamp radiation light. 
     
     
         25 . The plasma doping apparatus according to  claim 24 , wherein the heating means is a lamp annealing device which irradiates only a portion of the sample with lamp radiation light. 
     
     
         26 . The plasma doping apparatus according to  claim 19 , wherein the heating means comprises gas supplying means for supplying an inert gas to inside a heating chamber. 
     
     
         27 . The plasma doping apparatus according to  claim 18 , wherein the energy supplying means is heating means and the physical quantity measuring means is sheet resistance measuring means. 
     
     
         28 . The plasma doping apparatus according to  claim 18 , wherein the energy supplying means is an electron beam source for supplying an electron beam to the sample and the physical quantity measuring means is X-ray analyzing means comprising an X-ray detector.