Method of post-mold grinding a semiconductor package

Abstract

A method of grinding a molded semiconductor package to a desired ultra thin thickness without damage to the package is disclosed. Prior to grinding a molded package to a desired package thickness, the package may be protected from excessive mechanical stress generated during grinding by applying a protective tape to enclose interconnects formed on the package. This way, the protective tape provides support to the semiconductor package during package grinding involving the mold material as well as the die. In the post-grind package, the grinded die surface may be exposed and substantially flush with the mold material. The protective tape may then be removed to prepare the post-grind package for connection with an external device or PCB.

1 - 11 . (canceled) 
     
     
         12 . A flip-chip package comprising:
 a die flip-chip attached to a substrate on a first side in the package;   a plurality of interconnects provided on the substrate at a second side that is distant from the die;   a mold material at least partially encapsulating the die, wherein the mold material and the die have a common co-planar surface characteristic of a backgrinding process; and   wherein the mold material has a mold-material thickness, the die has a die thickness, and the package has a package thickness, and wherein the die thickness is less than the mold material thickness.   
     
     
         13 - 14 . (canceled) 
     
     
         15 . The flip-chip package according to  claim 12  further comprising an underfill material interposed between the die and the substrate. 
     
     
         16 . The flip-chip package according to  claim 12 , wherein the die thickness is between about 50 microns to 200 microns. 
     
     
         17 . The flip-chip package according to  claim 12 , wherein the package thickness is between above 500 microns to 1 millimeter.