Semiconductor-on-diamond devices and associated methods

Abstract

Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a lattice-orienting silicon (Si) substrate such that the base layer lattice is substantially oriented by the Si substrate, depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice, and disposing a layer of diamond onto the semiconductor layer. The base layer may include numerous materials, including, without limitation, aluminum phosphide (AlP), boron arsenide (BAs), gallium nitride (GaN), indium nitride (InN), and combinations thereof. Additionally, the method may further include removing the lattice-orienting Si substrate and the base layer from the semiconductor layer. In one aspect, the Si substrate may be of a single crystal orientation.

1 . A semiconductor-on-diamond device comprising:
 a single crystal semiconductor layer having a lattice substantially oriented by a base layer upon which the semiconductor layer was previously deposited, said semiconductor layer including a member selected from the group consisting of InN, AlN, GaN, and combinations thereof; and   a layer of diamond material coupled to the semiconductor layer.   
     
     
         2 . The semiconductor-on-diamond device of  claim 1 , wherein the single crystal semiconductor layer is a single crystal layer of AlN. 
     
     
         3 . The semiconductor-on-diamond device of  claim 2 , wherein the single crystal layer of AlN is a layer of cubic AlN. 
     
     
         4 . The semiconductor-on-diamond device of  claim 1 , wherein the single crystal semiconductor layer is a single crystal layer of GaN. 
     
     
         5 . The semiconductor-on-diamond device of  claim 4 , wherein single crystal layer of GaN is a layer of cubic GaN. 
     
     
         6 . The semiconductor-on-diamond device of  claim 1 , wherein the diamond layer is located between a support substrate and the single crystal semiconductor layer. 
     
     
         7 . The semiconductor-on-diamond device of  claim 6 , wherein the diamond layer is coupled to the support substrate. 
     
     
         8 . The semiconductor-on-diamond device of  claim 9 , wherein the device is an LED. 
     
     
         9 . The semiconductor-on-diamond device of  claim 1 , wherein the device is a semiconductor substrate. 
     
     
         10 . The semiconductor-on-diamond device of  claim 1 , wherein the diamond material layer includes single crystalline diamond, polycrystalline diamond, diamond-like carbon, or amorphous diamond. 
     
     
         11 . A method of making a semiconductor-on-diamond device, comprising:
 depositing a base layer onto a lattice-orienting substrate such that the base layer lattice is substantially oriented by the substrate;   depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice;   disposing a layer of diamond onto the semiconductor layer; and   removing the lattice-orienting substrate and the base layer from the semiconductor layer.   
     
     
         12 . The method of  claim 11 , wherein the substrate is of a single crystal orientation. 
     
     
         13 . The method of  claim 12 , wherein the substrate is a Si material. 
     
     
         14 . The method of  claim 11 , wherein the semiconductor layer includes GaN, InN, AlN, or combinations. 
     
     
         15 . The method of  claim 14 , wherein the semiconductor layer is GaN. 
     
     
         16 . The method of  claim 11 , wherein the base layer includes GaN, InN, AlN, or combinations. 
     
     
         17 . The method of  claim 11 , wherein depositing the semiconductor layer further comprises:
 depositing a layer of GaN onto a base layer of InN such that the GaN layer lattice is substantially oriented with respect to the InN layer lattice; and   depositing a layer of AlN onto the layer of GaN such that the AlN layer lattice is substantially oriented with respect to the GaN layer lattice.   
     
     
         18 . The method of  claim 11 , wherein depositing the semiconductor layer further comprises:
 depositing a layer of InN onto a base layer of GaN such that the InN layer lattice is substantially oriented with respect to the GaN layer lattice; and   depositing a layer of AlN onto the layer of InN such that the AlN layer lattice is substantially oriented with respect to the InN layer lattice.   
     
     
         19 . The method of  claim 1 , further comprising attaching a support substrate to the diamond material layer. 
     
     
         20 . The method of  claim 1 , wherein disposing the layer of diamond further includes bonding the layer of diamond to the semiconductor layer.