Dual zone gas injection nozzle

Abstract

The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

1 . A method for processing a substrate, comprising:
 positioning a substrate in a process volume within a chamber; and   flowing a processing gas to the process volume through an injection assembly, wherein the flowing a processing gas comprises:
 flowing a first portion of the processing gas to a first region of the process volume through a plurality of first injection ports; 
 flowing a second portion of the processing gas to a second region of the process volume through a plurality of second injection ports; and 
 adjusting a ratio of the first portion and the second portion to achieve a desired distribution of the processing gas within the process volume. 
   
     
     
         2 . The method of  claim 1 , further comprising generating a plasma of the processing gas within the process volume. 
     
     
         3 . The method of  claim 1 , wherein the flowing a processing gas further comprises using a controllable splitter to split the processing gas into the first portion and the second portion. 
     
     
         4 . The method of  claim 1 , wherein the injection assembly is disposed above a center of the substrate being processed, the plurality of first injection ports are directed perpendicularly to the substrate near the center, and the plurality of second injection ports are directed parallel to the substrate in a radial manner. 
     
     
         5 . The method of  claim 1 , wherein the flowing a processing gas further comprises adjusting a total flow of the processing gas to achieve the desired distribution of the processing gas. 
     
     
         6 . The method of  claim 1 , wherein the plurality of first injection ports flow the processing gas in a direction perpendicular to the plurality of second injection ports. 
     
     
         7 . The method of  claim 1 , wherein each of injection ports of the plurality of first injection ports are directed parallel to one another. 
     
     
         8 . The method of  claim 1 , wherein the chamber is a plasma chamber. 
     
     
         9 . The method of  claim 8 , further comprising performing a nitridation process on the substrate. 
     
     
         10 . The method of  claim 9 , further comprising applying RF power to a coil assembly positioned within the chamber while flowing the processing gas through the injection assembly. 
     
     
         11 . A method for processing a substrate, comprising:
 positioning a substrate in a process volume within a chamber;   flowing a processing gas to the process volume through an injection assembly, wherein the flowing a processing gas comprises:
 flowing a first portion of the processing gas to a first region of the process volume through a plurality of first injection ports; 
 flowing a second portion of the processing gas to a second region of the process volume through a plurality of second injection ports; and 
 adjusting a ratio of the first portion and second portion to achieve a desired distribution of the processing gas within the process volume; and 
   applying RF power to a coil assembly positioned within the chamber to ionize the first portion of the processing gas and the second portion of the processing gas.   
     
     
         12 . The method of  claim 11 , wherein the injection ports of the plurality of first injection ports are directed parallel to one another. 
     
     
         13 . The method of  claim 11 , wherein the flowing a processing gas further comprises using a controllable splitter to split the processing gas into the first portion and the second portion. 
     
     
         14 . The method of  claim 11 , wherein the injection assembly is disposed above a center of the substrate being processed, the plurality of first injection ports are directed perpendicularly to the substrate near the center, and the plurality of second injection ports are directed parallel to the substrate in a radial manner. 
     
     
         15 . The method of  claim 11 , wherein the flowing a processing gas further comprises adjusting a total flow of the processing gas to achieve the desired distribution of the processing gas. 
     
     
         16 . The method of  claim 11 , wherein each of injection ports of the plurality of first injection ports are directed parallel to one another. 
     
     
         17 . A method for performing a plasma nitridation process on a substrate, comprising:
 positioning a substrate having a silicon dioxide gate dielectric thereon in a process volume within a chamber; and   flowing nitrogen gas to the process volume through an injection assembly, wherein the flowing a nitrogen gas comprises:
 flowing a first portion of the nitrogen gas to a first region of the process volume through a plurality of first injection ports; 
 flowing a second portion of the nitrogen gas to a second region of the process volume through a plurality of second injection ports; and 
 adjusting a ratio of the first portion and second portion to achieve a desired distribution of the processing gas within the process volume; 
   ionizing the first portion of the nitrogen gas and the second portion of the nitrogen gas; and   diffusing the ionized nitrogen gas into the silicon dioxide gate dielectric film.   
     
     
         18 . The method of  claim 17 , wherein the flowing a nitrogen gas further comprises adjusting a total flow of the nitrogen gas to achieve the desired distribution of the nitrogen gas. 
     
     
         19 . The method of  claim 17 , wherein each of injection ports of the plurality of first injection ports are directed parallel to one another. 
     
     
         20 . The method of  claim 17 , wherein the injection assembly is disposed above a center of the substrate being processed, the plurality of first injection ports are directed perpendicularly to the substrate near the center, and the plurality of second injection ports are directed parallel to the substrate in a radial manner.