Display device, driving method of display device, and electronic appliance

Abstract

A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels comprises first and second subpixels each of which comprises a transistor that comprises an oxide semiconductor including indium, and in which one image of at least one of the plurality of pixels is displayed by a plurality of signals, is provided.

1 . A semiconductor device comprising:
 a plurality of pixels over a substrate, wherein at least one pixel of the plurality of pixels comprises:
 a first subpixel, wherein the first subpixel comprises:
 a first transistor that comprises an oxide semiconductor comprising indium; and 
 a first pixel electrode electrically connected to the first transistor; 
 
 a second subpixel, wherein the second subpixel comprises:
 a second transistor that comprises an oxide semiconductor comprising indium; 
 a second pixel electrode electrically connected to the second transistor; and 
 
   a display medium over the substrate, the display medium comprising an electronic ink,   wherein one image of at least one of the plurality of pixels is displayed by a plurality of signals.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the semiconductor device is an electronic paper. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the substrate over which the first transistor that comprises the oxide semiconductor comprising indium and the second transistor that comprises the oxide semiconductor comprising indium are provided is a plastic substrate. 
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein each of the first subpixel and the second subpixel comprises first to m-th subpixel,   wherein an area of the (s+1)th subpixel is twice an area of the s-th subpixel, wherein one frame of each of the first to m-th subpixels is divided into first to n-th subframes,   wherein a display period of the (p+1)th subframe is 2 m  times longer than a display period of a p-th subframe,   wherein at least one of the first to n-th subframes is divided into a plurality of subframes each having a display period shorter than that of the one of the first to n-th subframes, so that the first to n-th subframes are increased to first to t-th subframes,   wherein when at least one of the first to m-th subpixels is displayed in at least one of the first to t-th subframes for displaying a gray scale level of i, the one of the first to m-th subpixels is displayed in the one of the first to t-th subframes for whenever displaying a gray scale level larger than i,   wherein one gate selection period is divided into two subgate selection periods,   wherein m is an integer of m≧2,   wherein s is an integer of 1≦s≦(m−1),   wherein n is an integer of n≧2,   wherein p is an integer of 1≦p≦(n−1),   wherein t is an integer of t>n, and   wherein i is an integer of i≧0.   
     
     
         5 . The semiconductor device according to  claim 1 , further comprising at least one of a power supply circuit, a flexible printed circuit, a printed wiring board, and a circuit board. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein at least one of the oxide semiconductor comprised in the first transistor and the oxide semiconductor comprised in the second transistor is InGaZnO. 
     
     
         7 . The semiconductor device according to  claim 1 ,
 wherein at least one pixel of the plurality of pixels comprises a first pixel capable of displaying a red color, a second pixel capable of displaying a green color, and a third pixel capable of displaying a blue color,   wherein an area of the first subpixel and an area of the second subpixel is different from each other, and   wherein an area of the first pixel, an area of the second pixel, and an area of the third pixel are different from one another.   
     
     
         8 . A semiconductor device comprising:
 a plurality of pixels over a substrate, wherein at least one pixel of the plurality of pixels comprises:
 a first subpixel, wherein the first subpixel comprises:
 a first transistor that comprises an oxide semiconductor comprising indium; and 
 a first pixel electrode electrically connected to the first transistor; 
 
 a second subpixel, wherein the second subpixel comprises:
 a second transistor that comprises an oxide semiconductor comprising indium; 
 a second pixel electrode electrically connected to the second transistor; and 
 
   a display medium over the substrate, the display medium comprising an electronic ink,   a common electrode that faces to the first pixel electrode and the second pixel electrode;   a terminal provided on the substrate, the terminal being electrically connected to the common electrode,   wherein one image of at least one of the plurality of pixels is displayed by a plurality of signals.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein the semiconductor device is an electronic paper. 
     
     
         10 . The semiconductor device according to  claim 8 , wherein the substrate over which the first transistor that comprises the oxide semiconductor comprising indium and the second transistor that comprises the oxide semiconductor comprising indium are provided is a plastic substrate. 
     
     
         11 . The semiconductor device according to  claim 8 ,
 wherein each of the first subpixel and the second subpixel comprises first to m-th subpixel,   wherein an area of the (s+1)th subpixel is twice an area of the s-th subpixel,   wherein one frame of each of the first to m-th subpixels is divided into first to n-th subframes,   wherein a display period of the (p+1)th subframe is 2 m  times longer than a display period of a p-th subframe,   wherein at least one of the first to n-th subframes is divided into a plurality of subframes each having a display period shorter than that of the one of the first to n-th subframes, so that the first to n-th subframes are increased to first to t-th subframes,   wherein when at least one of the first to m-th subpixels is displayed in at least one of the first to t-th subframes for displaying a gray scale level of i, the one of the first to m-th subpixels is displayed in the one of the first to t-th subframes for whenever displaying a gray scale level larger than i,   wherein one gate selection period is divided into two subgate selection periods,   wherein m is an integer of m≧2,   wherein s is an integer of 1≦s≦(m−1),   wherein n is an integer of n≧2,   wherein p is an integer of 1≦p≦(n−1),   wherein t is an integer of t>n, and   wherein i is an integer of i≧0.   
     
     
         12 . The semiconductor device according to  claim 8 , further comprising at least one of a power supply circuit, a flexible printed circuit, a printed wiring board, and a circuit board. 
     
     
         13 . The semiconductor device according to  claim 8 , further comprising a second terminal on the substrate,
 wherein the second terminal is electrically connected to the common electrode.   
     
     
         14 . The semiconductor device according to  claim 8 , wherein at least one of the oxide semiconductor comprised in the first transistor and the oxide semiconductor comprised in the second transistor is InGaZnO. 
     
     
         15 . The semiconductor device according to  claim 8 ,
 wherein at least one pixel of the plurality of pixels comprises a first pixel capable of displaying a red color, a second pixel capable of displaying a green color, and a third pixel capable of displaying a blue color,   wherein an area of the first subpixel and an area of the second subpixel is different from each other, and   wherein an area of the first pixel, an area of the second pixel, and an area of the third pixel are different from one another.   
     
     
         16 . A semiconductor device comprising:
 a plurality of pixels over a substrate, wherein at least one pixel of the plurality of pixels comprises:
 a first subpixel, wherein the first subpixel comprises:
 a first transistor that comprises an oxide semiconductor comprising indium; and 
 a first pixel electrode electrically connected to the first transistor; 
 
 a second subpixel, wherein the second subpixel comprises:
 a second transistor that comprises an oxide semiconductor comprising indium; 
 a second pixel electrode electrically connected to the second transistor; and 
 
   a display medium over the substrate, the display medium comprising an electronic ink,   a common electrode that faces to the first pixel electrode and the second pixel electrode;   a terminal provided on the substrate, the terminal being electrically connected to the common electrode,   wherein one image of at least one of the plurality of pixels is displayed by a plurality of signals, and   wherein an entirety of the terminal overlaps with the substrate.   
     
     
         17 . The semiconductor device according to  claim 16 , wherein the semiconductor device is an electronic paper. 
     
     
         18 . The semiconductor device according to  claim 16 , wherein the substrate over which the first transistor that comprises the oxide semiconductor comprising indium and the second transistor that comprises the oxide semiconductor comprising indium are provided is a plastic substrate. 
     
     
         19 . The semiconductor device according to  claim 16 ,
 wherein each of the first subpixel and the second subpixel comprises first to m-th subpixel,   wherein an area of the (s+1)th subpixel is twice an area of the s-th subpixel,   wherein one frame of each of the first to m-th subpixels is divided into first to n-th subframes,   wherein a display period of the (p+1)th subframe is 2 m  times longer than a display period of a p-th subframe,   wherein at least one of the first to n-th subframes is divided into a plurality of subframes each having a display period shorter than that of the one of the first to n-th subframes, so that the first to n-th subframes are increased to first to t-th subframes,   wherein when at least one of the first to m-th subpixels is displayed in at least one of the first to t-th subframes for displaying a gray scale level of i, the one of the first to m-th subpixels is displayed in the one of the first to t-th subframes for whenever displaying a gray scale level larger than i,   wherein one gate selection period is divided into two subgate selection periods,   wherein m is an integer of m≧2,   wherein s is an integer of 1≦s≦(m−1),   wherein n is an integer of n≧2,   wherein p is an integer of 1≦p≦(n−1),   wherein t is an integer of t>n, and   wherein i is an integer of i≧0.   
     
     
         20 . The semiconductor device according to  claim 16 , further comprising at least one of a power supply circuit, a flexible printed circuit, a printed wiring board, and a circuit board. 
     
     
         21 . The semiconductor device according to  claim 16 , further comprising a second terminal on the substrate,
 wherein the second terminal is electrically connected to the common electrode.   
     
     
         22 . The semiconductor device according to  claim 16 , wherein at least one of the oxide semiconductor comprised in the first transistor and the oxide semiconductor comprised in the second transistor is InGaZnO. 
     
     
         23 . The semiconductor device according to  claim 16 ,
 wherein at least one pixel of the plurality of pixels comprises a first pixel capable of displaying a red color, a second pixel capable of displaying a green color, and a third pixel capable of displaying a blue color,   wherein an area of the first subpixel and an area of the second subpixel is different from each other, and   wherein an area of the first pixel, an area of the second pixel, and an area of the third pixel are different from one another.