Method for fabricating optical semiconductor device

Abstract

A method for fabricating an optical semiconductor device, including: melting a solder supplied on a carrier; mounting a semiconductor laser chip on the melted solder with a tool for holding the semiconductor laser chip; cooling the solder; releasing the tool from the semiconductor laser chip after the solder is cooled; remelting the solder after the tool is released from the semiconductor laser chip; and recooling the remelted solder.

1 . A method for fabricating an optical semiconductor device, comprising:
 melting a solder supplied on a carrier;   mounting a semiconductor laser chip on the melted solder with a tool for holding the semiconductor laser chip;   cooling the solder;   releasing the tool from the semiconductor laser chip after the solder is cooled;   remelting the solder after the tool is released from the semiconductor laser chip; and   recooling the remelted solder.   
     
     
         2 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein the cooling is natural cooling. 
     
     
         3 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein the cooling is cooling by blowing gas. 
     
     
         4 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein the carrier includes a mounted region on which the semiconductor laser chip is mounted, and a solder accumulation portion that extends in a direction intersecting a longitudinal direction of the mounted region. 
     
     
         5 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein a length of the longitudinal direction of the semiconductor laser chip is equal to or more than 6 times of a width thereof. 
     
     
         6 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein a long side of the semiconductor laser chip is equal to or more than 3.0 mm. 
     
     
         7 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein a metal of a backside of the semiconductor laser chip is Au, and a temperature of the remelting is higher than a temperature of the mounting of the semiconductor laser. 
     
     
         8 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein the solder is AuSn, a melting temperature and a remelting temperature are 310-320° C., and a interval between the mounting of the semiconductor laser chip and startup of the cooling is equal to or less than 3 seconds. 
     
     
         9 . A method for fabricating an optical semiconductor device, comprising:
 melting a solder supplied on a carrier;   mounting a semiconductor laser chip on the melted solder with a tool for holding the semiconductor laser chip, a length of the longitudinal direction of the semiconductor laser chip being equal to or more than 6 times of a width thereof;   releasing the tool from the semiconductor laser chip in a state where the solder is melted; and   cooling the solder in a state where the tool is released from the semiconductor laser chip.   
     
     
         10 . The method for fabricating the optical semiconductor device according to  claim 9 , wherein a long side of the semiconductor laser chip is equal to or more than 3.0 mm. 
     
     
         11 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein the semiconductor laser chip is a tunable laser. 
     
     
         12 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein the tool is in contact with a surface of a region excluding a stripe-like active region in the semiconductor laser chip, and holds the semiconductor laser chip. 
     
     
         13 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein the melting is carried out by placing the carrier on a heater block. 
     
     
         14 . The method for fabricating the optical semiconductor device according to  claim 1 , wherein the solder is AuSn, AuGe or AgSn. 
     
     
         15 . The method for fabricating the optical semiconductor device according to  claim 2 , wherein the natural cooling is carried out by placing the carrier on a heat sink. 
     
     
         16 . The method for fabricating the optical semiconductor device according to  claim 3 , wherein the gas is nitrogen gas. 
     
     
         17 . The method for fabricating the optical semiconductor device according to  claim 4 , wherein the solder accumulation portion is a center portion in the direction intersecting the longitudinal direction of the mounted region. 
     
     
         18 . The method for fabricating the optical semiconductor device according to  claim 4 , wherein the solder accumulation portion is rectangle. 
     
     
         19 . The method for fabricating the optical semiconductor device according to  claim 9 , wherein the solder is AuSn, AuGe or AgSn. 
     
     
         20 . The method for fabricating the optical semiconductor device according to  claim 9 , wherein the melting is carried out by placing the carrier on a heater block.