Plasma processing apparatus

Abstract

The invention provides a plasma processing apparatus having a means for generating a plasma capable of correcting the eccentricity of the plasma diffused above the wafer caused by magnetic field or by vacuum eccentricity, comprising a vacuum processing chamber in which a sample is processed via plasma, a gas supply means for supplying gas into the vacuum processing chamber, a sample stage disposed within the vacuum processing chamber on which the sample is placed, an induction coil disposed outside the vacuum processing chamber, a radio frequency power supply for supplying radio frequency power to the induction coil, a Faraday shield being capacitively coupled with the plasma, and an eccentricity correction means disposed between the induction coil and a dielectric sealing window constituting an upper surface of the vacuum processing chamber, wherein the eccentricity correction means generates a plasma capable of correcting the eccentricity of the plasma.

1 . A plasma processing apparatus comprising:
 a vacuum processing chamber in which a sample is processed via plasma;   a gas supply means for supplying gas into the vacuum processing chamber;   a sample stage disposed within the vacuum processing chamber on which the sample is placed;   an induction coil disposed outside the vacuum processing chamber;   a radio frequency power supply for supplying radio frequency power to the induction coil;   a Faraday shield being capacitively coupled with the plasma; and   an eccentricity correction means disposed between the induction coil and a dielectric sealing window constituting an upper surface of the vacuum processing chamber, wherein the eccentricity correction means generates a plasma capable of correcting the eccentricity of the plasma.   
     
     
         2 . The plasma processing apparatus according to  claim 1 , wherein
 the eccentricity correction means comprises a conductor plate, wherein the conductor plate is in conduction with the Faraday shield.   
     
     
         3 . The plasma processing apparatus according to  claim 1 , wherein
 the eccentricity correction means comprises a ring-shaped conductor, wherein the ring-shaped conductor is in conduction with the Faraday shield.