US2012133030A1PendingUtilityA1

Tsv substrate structure and the stacked assembly thereof

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Assignee: WANG CHUNG-CHIHPriority: Nov 26, 2010Filed: Dec 15, 2010Published: May 31, 2012
Est. expiryNov 26, 2030(~4.3 yrs left)· nominal 20-yr term from priority
Inventors:Chung-Chih WangPei-Jer TzengCha-Hsin LinTzu-Kun Ku
H10P 52/403H10P 50/264H10W 90/722H10W 90/297H10W 72/9226H10W 72/07251H10W 72/07227H10W 72/01271H10W 72/942H10W 72/923H10W 72/242H10W 72/221H10W 72/072H10W 72/29H10W 72/20H10W 90/00H10W 70/635H10W 70/611H10W 42/121H10W 20/056H10W 20/054H10W 20/042H10W 20/20H10W 20/0245H10W 20/2125H10W 20/023
47
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Claims

Abstract

The disclosure provides a TSV substrate structure and the stacked assembly of a plurality of the substrate structures, the TSV substrate structure including: a substrate comprising a first surface, a corresponding second surface, and a TSV communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first and a second ends corresponding to the first and second surfaces of the substrate, respectively.

Claims

exact text as granted — not AI-modified
1 . A substrate structure comprising:
 a substrate comprising a first surface, a corresponding second surface, and a through-silicon via (TSV) communicating the first surface with the second surface through the substrate; and   a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first and a second ends corresponding to the first and second surfaces of the substrate, respectively.   
     
     
         2 . The substrate structure of  claim 1 , wherein the conductor unit further comprises a first extensional part formed on the side surface of the conductor body in proximity to the first end. 
     
     
         3 . The substrate structure of  claim 2 , wherein the first extensional part surrounds the conductor body. 
     
     
         4 . The substrate structure of  claim 2 , wherein the conductor unit further comprises a second extensional part formed on the side surface of the conductor body in proximity to the second end. 
     
     
         5 . The substrate structure of  claim 4 , wherein the second extensional part surrounds the conductor body. 
     
     
         6 . The substrate structure of  claim 1 , wherein the conductor unit further comprises:
 a first protrusion formed on the base surface of the conductor body at the first end.   
     
     
         7 . The substrate structure of  claim 6 , wherein the conductor unit further comprises:
 a second protrusion formed on the base surface of the conductor body at the second end.   
     
     
         8 . The substrate structure of  claim 6 , wherein the conductor unit further comprises:
 a recess formed in the base surface of the conductor body at the second end, wherein the recess is not smaller than the protrusion in area and is not higher than the protrusion in highness.   
     
     
         9 . The substrate structure of  claim 1 , wherein the conductor unit further comprises:
 a first recess formed in the base surface of the conductor body at the first end.   
     
     
         10 . The substrate structure of  claim 9 , wherein the conductor unit further comprises:
 a second recess formed in the base surface of the conductor body at the second end.   
     
     
         11 . The substrate structure of  claim 1 , wherein the substrate is selected from the group consisting of a die, a chip, a wafer, an interposer, or the combinations thereof. 
     
     
         12 . The substrate structure of  claim 1 , wherein the substrate further comprises:
 a first insulator layer formed on the side surface of the TSV.   
     
     
         13 . The substrate structure of  claim 12 , wherein the first insulator layer further comprises:
 a first recessed portion formed on the base surface of the conductor body at the first end, wherein the area of the first recessed portion is not larger than the cross-sectional area of the conductor body.   
     
     
         14 . The substrate structure of  claim 13 , wherein the first insulator layer further comprises:
 a second recessed portion formed on the base surface of the conductor body at the second end, wherein the area of the second recessed portion is not larger than the cross-sectional area of the conductor body.   
     
     
         15 . The substrate structure of  claim 1 , wherein the substrate further comprises:
 a second insulator layer formed on the first surface of the substrate.   
     
     
         16 . The substrate structure of  claim 15 , wherein the substrate further comprises:
 a third insulator layer formed on the second surface of the substrate.   
     
     
         17 . A stacked assembly comprising a plurality of substrate structures stacked on each other, each of the substrate structures comprising:
 a substrate comprising a first surface, a corresponding second surface, and a TSV communicating the first surface with the second surface through the substrate; and   a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first and a second ends corresponding to the first and second sides of the substrate, respectively.   
     
     
         18 . The stacked assembly of  claim 17 , wherein the conductor unit further comprises a first extensional part formed on the side surface of the conductor body in proximity to the first end. 
     
     
         19 . The stacked assembly of  claim 18 , wherein the first extensional part surrounds the conductor body. 
     
     
         20 . The stacked assembly of  claim 18 , wherein the conductor unit further comprises a second extensional part formed on the side surface of the conductor body in proximity to the second end. 
     
     
         21 . The stacked assembly of  claim 20 , wherein the second extensional part surrounds the conductor body. 
     
     
         22 . The stacked assembly of  claim 17 , wherein the conductor unit further comprises:
 a first protrusion formed on the base surface of the conductor body at the first end.   
     
     
         23 . The stacked assembly of  claim 22 , wherein the conductor unit further comprises:
 a second protrusion formed on the base surface of the conductor body at the second end.   
     
     
         24 . The stacked assembly of  claim 22 , wherein the conductor unit further comprises:
 a recess formed in the base surface of the conductor body at the second end, wherein the recess is not smaller than the protrusion in area and is not higher than the protrusion in highness.   
     
     
         25 . The stacked assembly of  claim 17 , wherein the conductor unit further comprises:
 a first recess formed in the base surface of the conductor body at the first end.   
     
     
         26 . The stacked assembly of  claim 25 , wherein the conductor unit further comprises:
 a second recess formed in the base surface of the conductor body at the second end.   
     
     
         27 . The stacked assembly of  claim 17 , wherein the substrate is selected from the group consisting of a die, a chip, a wafer, an interposer, or the combinations thereof. 
     
     
         28 . The stacked assembly of  claim 17 , wherein the substrate further comprises:
 a first insulator layer formed on the side surface of the TSV.   
     
     
         29 . The stacked assembly of  claim 28 , wherein the first insulator layer further comprises:
 a first recessed portion formed on the base surface of the conductor body at the first end, wherein the area of the first recessed portion is not larger than the cross-sectional area of the conductor body.   
     
     
         30 . The stacked assembly of  claim 29 , wherein the first insulator layer further comprises:
 a second recessed portion formed on the base surface of the conductor body at the second end, wherein the area of the second recessed portion is not larger than the cross-sectional area of the conductor body.   
     
     
         31 . The stacked assembly of  claim 17 , wherein the substrate further comprises:
 a second insulator layer formed on the first surface of the substrate.   
     
     
         32 . The stacked assembly of  claim 31 , wherein the substrate further comprises:
 a third insulator layer formed on the second surface of the substrate.   
     
     
         33 . The stacked assembly of  claim 17 , wherein the TSV of each of the substrate structures corresponds to each other.

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