Method of producing a thin layer of semiconductor material

Abstract

A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes implanting ions into the semiconductor wafer to define a reference plane, where the ion dose is above a minimum dose, but below a critical dose so as to avoid degrading the wafer surface. The method further includes applying a thermal treatment to define a layer of microcavities and applying stress to free the thin layer from the wafer.

1 .- 12 . (canceled) 
     
     
         13 . A semiconductor structure comprising a thin layer of silicon fixed on an applicator, wherein the thin layer includes an exposed surface characterized by fractured solid bridges spaced apart by cavities. 
     
     
         14 . The semiconductor structure of  claim 13 , wherein the applicator comprises a flexible support. 
     
     
         15 . The semiconductor structure of  claim 14 , wherein the flexible support comprises a plastic sheet. 
     
     
         16 . The semiconductor structure of  claim 13  further comprising a protective layer between the thin layer and the applicator. 
     
     
         17 . The semiconductor structure of  claim 13 , wherein the applicator comprises a silicon wafer. 
     
     
         18 . The semiconductor structure of  claim 17 , wherein the silicon wafer includes electronic components therein. 
     
     
         19 . A semiconductor structure comprising a thin semiconductor layer bonded to an applicator, wherein the thin semiconductor layer includes electronic components therein and further includes an exposed surface characterized by fractured solid bridges spaced apart by cavities, and wherein the bond between the applicator and the thin semiconductor layer has sufficient energy to resist stress applied to the exposed surface during creation of the fractured solid bridges. 
     
     
         20 . The semiconductor structure of  claim 19 , wherein the applicator comprises a flexible support. 
     
     
         21 . The semiconductor structure of  claim 20 , wherein the flexible support comprises a plastic sheet. 
     
     
         22 . The semiconductor structure of  claim 19  further comprising a protective layer between the thin layer and the applicator, wherein the applicator is bonded to the protective layer. 
     
     
         23 . The semiconductor structure of  claim 19 , wherein the applicator comprises a silicon wafer. 
     
     
         24 . The semiconductor structure of  claim 23 , wherein the silicon wafer includes electronic components therein. 
     
     
         25 . A method for producing a thin film comprising:
 providing a first substrate having a face surface;   introducing ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions,   wherein a thin film layer is defined from the face surface to the microcavities and the microcavities reside between solid bridges of the first substrate;   bonding a second substrate to the face surface of the first substrate; and   applying an external force to fracture the solid bridges and release the thin film layer from the first substrate.   
     
     
         26 . A method for producing a thin film comprising:
 providing a first substrate having a face surface;   introducing hydrogen ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions,   wherein a thin film layer is defined from the face surface to the microcavities and the microcavities reside between solid bridges of the first substrate, and the hydrogen ions are introduced into the first substrate at a temperature and at a total amount so as not to fracture the solid bridges during energizing of the first substrate;   bonding a second substrate to the face surface of the first substrate; and   applying an external force to fracture the solid bridges and release the thin film layer from the first substrate.