Electronic device, resonator, oscillator and method for manufacturing electronic device

Abstract

An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

1 . An electronic device comprising a substrate having a functional structural body provided in an inside of a cavity part and a CMOS circuit part placed side by side on the substrate, wherein
 a covering structure for defining the cavity part is provided with a side wall; and a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.   
     
     
         2 . The electronic device according to  claim 1 , wherein the corrosion-resistant layer is configured by a part of the first covering layer in a thickness direction thereof. 
     
     
         3 . The electronic device according to  claim 1 , wherein the corrosion-resistant layer is composed of TiN, Ti, W, Au, Pt or an alloy thereof. 
     
     
         4 . The electronic device according to  claim 1 , wherein the corrosion-resistant layer is configured of a layer provided in an uppermost layer of the first covering layer. 
     
     
         5 . The electronic device according to  claim 1 , wherein the corrosion-resistant layer is configured of a layer provided in a lowermost layer of the first covering layer. 
     
     
         6 . The electronic device according to  claim 1 , wherein the corrosion-resistant layer is configured of layers provided in an uppermost layer and a lowermost layer of the first covering layer. 
     
     
         7 . The electronic device according to  claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, a TiN layer, an Al—Cu layer and a TiN layer are laminated in this order from a surface facing at the cavity part. 
     
     
         8 . The electronic device according to  claim 1 , wherein the first covering layer is of a laminated structure in which a TiN layer, an Al—Cu layer, a layer and a TiN layer are laminated in this order from a surface facing at the cavity part. 
     
     
         9 . The electronic device according to  claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, a TiN layer, an Al—Cu layer, a Ti layer and a TiN layer are laminated in this order from a surface facing at the cavity part. 
     
     
         10 . The electronic device according to  claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, an Al—Cu layer and a TiN layer are laminated in this order from a surface facing at the cavity part. 
     
     
         11 . The electronic device according to  claim 1 , wherein the first covering layer is of a laminated structure in which a TiN layer, an Al—Cu layer and a TiN layer are laminated in this order from a surface facing at the cavity part. 
     
     
         12 . The electronic device according to  claim 1 , wherein the side wall further includes an interlayer insulating layer and a wiring layer, the interlayer insulating layer and the wiring layer being a part of interlayer insulating layers and wiring layers of the functional structural body and the CMOS circuit part.