Method for manufacturing a semiconductor device having a refractory metal containing film

Abstract

A semiconductor device and a method for manufacturing the same of the present invention in which the semiconductor device is provided with a fuse structure or an electrode pad structure, suppress the copper blowing-out from a copper containing metal film. The semiconductor device comprises a silicon substrate, SiO 2 film provided on the silicon substrate, copper films embedded in the SiO 2 film, TiN films covering an upper face of a boundary region between an upper face of copper films and the copper films, and the SiO 2 film, and SiON films covering an upper face of the TiN films.

1 . A method for manufacturing a semiconductor device comprising:
 forming a first insulating film on a semiconductor substrate; embedding a copper containing metal film in said first insulating film; forming a refractory metal containing film covering an upper face of said first insulating film and an upper face of said copper containing metal film;   forming a second insulating film covering an upper face of said refractory metal containing film, said second insulating film being made of material through which oxygen plasma is hard to pass;   forming a resist film on an upper face of said second insulating film, etching selectively said second insulating film and said refractory metal containing film while employing said resist film as a mask, and carrying out a patterning into a shape to cover an upper portion of said copper containing metal film and an upper portion of a boundary portion between said copper containing metal film and said first insulating film; and removing said resist film while employing an oxygen plasma.   
     
     
         2 . The method for manufacturing a semiconductor device according to  claim 1 , wherein said forming said second insulating film includes forming said second insulating film by plasma technique or CVD technique. 
     
     
         3 . The method for manufacturing a semiconductor device according to  claim 1 , wherein said second insulating film includes a silicon nitride film, a silicon oxide film or a silicon oxynitride film. 
     
     
         4 . A method for manufacturing a semiconductor device comprising:
 forming a first insulating film on a semiconductor substrate;   embedding a copper containing metal film in said first insulating film; forming a refractory metal containing film covering an upper face of said first insulating film and an upper face of said copper containing metal film;   forming a second insulating film covering an upper face of said refractory metal containing film, said second insulating film being made of material through which oxygen plasma is hard to pass; and   forming a resist film on an upper face of said second insulating film, etching selectively said second insulating film while employing said resist film as a mask, removing said resist film while employing an oxygen plasma, etching selectively said refractory metal containing film while employing said second insulating film as a mask, and carrying out a patterning into a shape to cover an upper portion of said copper containing metal film and an upper portion of a boundary portion between said copper containing metal film and said first insulating film in connection with said second insulating film and said refractory metal containing film.   
     
     
         5 . The method for manufacturing a semiconductor device according to  claim 4 , wherein said forming said second insulating film includes forming said second insulating film by plasma technique or CVD technique. 
     
     
         6 . The method for manufacturing a semiconductor device according to  claim 4 , wherein said second insulating film includes a silicon nitride film, a silicon oxide film or a silicon oxynitride film.