Method and apparatus for dynamic thin-layer chemical processing of semiconductor wafers

Abstract

A semiconductor wafer processing and analysis apparatus ( 20 ) includes a processing micro chamber ( 22 ) for closely receiving a semiconductor wafer ( 27 ) therein. The chamber may be opened for loading and removing the semiconductor wafers and then closed for processing of the wafer wherein chemical reagents and other fluids are introduced into the chamber. Small clearances are provided between the upper surface, the lower surfaces, and the perimeter edge of the wafer and the corresponding portions of the processing chamber. A high-speed collection system is provided for collecting and removing the spent reagents and fluids from the chamber for either on-line or off-line analysis or for waste treatment.

1 . A system for analyzing materials on the surface of a semiconductor wafer, comprising:
 (a) a chamber in which a semiconductor wafer is processed, wherein when said chamber is in closed position, the semiconductor is closely disposed between the upper and lower interior surfaces of the chamber;   (b) at least one entrance opening in the chamber for directing processing fluid into the chamber;   (c) at least one recess in the lower interior surface at an elevation below the remainder of the lower working surface to serve as a collection location for spent processing fluid;   (d) at least one outlet in fluid flow communication with the recess to rapidly direct spent processing fluid away from the chamber; and   (e) an on-line testing unit for analyzing the characteristics of the spent fluid in real time.   
     
     
         2 . The system of  claim 1 , wherein the processing fluid is an etching fluid. 
     
     
         3 . The system of  claim 1 , wherein the on-line testing unit is analyzing an etching fluid. 
     
     
         4 . The system of  claim 1 , wherein the on-line testing unit is analyzing spent processing fluid resulting from a wafer cleaning process in the chamber. 
     
     
         5 . The system of  claim 1 , further comprising:
 (f) A detector for controlling the processing of the semiconductor wafer based on the result of the on-line testing unit.   
     
     
         6 . A method of analyzing materials on the surface of a semiconductor wafer, comprising:
 (a) processing a semiconductor wafer in a chamber, wherein when said chamber is in closed position, the semiconductor is closely disposed between the upper and lower interior surfaces of the chamber;   (b) introducing processing fluid into at least one entrance opening in the chamber;   (c) directing spent processing fluid through at least one recess in the lower interior surface at an elevation below the remainder of the lower working surface;   (d) collecting spent processing fluid at least one outlet in fluid flow communication with the recess; and   (e) directing the collected spent fluid to an on-line testing unit for analyzing the characteristics of the spent fluid.   
     
     
         7 . The method of  claim 6 , wherein the processing fluid is an etching fluid. 
     
     
         8 . The system of  claim 6 , wherein the on-line testing unit is analyzing an etching fluid. 
     
     
         9 . The system of  claim 6 , wherein the on-line testing unit is analyzing spent processing fluid resulting from a wafer cleaning process in the chamber. 
     
     
         10 . The method of  claim 6 , further comprising:
 (f) controlling the processing of the semiconductor wafer based on the result of the on-line testing unit.