Film formation apparatus and film formation method

Abstract

Provided are a film formation apparatus and a film formation method which may control with accuracy the thickness of a thin film formed on the film formation object. A film formation apparatus includes a moving part (film formation source unit) for moving a film formation source between a predetermined film formation waiting position and a predetermined film forming position is provided, and the moving part holds a quartz oscillator for measurement and a quartz oscillator for calibration so that their relative positions with respect to the film formation source are maintained. And a calibration step for calibrating a monitored value of the quartz oscillator for measurement, using a monitored value of the quartz oscillator for calibration, is performed in a middle of the film forming step of forming the film on the film formation object.

1 . A film formation apparatus for forming a film of a film forming material on a film formation object, comprising:
 a film formation source for heating the film forming material and for releasing vapors of the film forming material;   a moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position;   a quartz oscillator for measurement for monitoring an amount of the vapors of the film forming material released from the film formation source; and   a quartz oscillator for calibration for calibrating a measured value of the quartz oscillator for measurement,   wherein the moving part holds the quartz oscillator for measurement and the quartz oscillator for calibration.   
     
     
         2 . A film formation method, comprising:
 a film formation step of heating a film formation source which includes therein a film forming material to release vapors of the film forming material and forming a film of the film forming material on a film formation object while monitoring an amount of the released vapors of the film forming material using a quartz oscillator for measurement;   a control step of adjusting a heating temperature of the film formation source based on the monitored value of the quartz oscillator for measurement; and   a calibration step of monitoring, using a quartz oscillator for calibration, the amount of the released vapors of the film forming material and calibrating, using the monitored value, the monitored value of the quartz oscillator for measurement, wherein:   the calibration step is performed in a middle of the film forming step of forming the film on the film formation object.   
     
     
         3 . A film formation method according to  claim 2 , the calibration step comprises:
 monitoring, by both the quartz oscillator for measurement and the quartz oscillator for calibration, the amount of the released vapors of the film forming material;   determining a film thickness value A of the film forming material using the monitored value of the quartz oscillator for calibration and a film thickness value B of the film forming material using the monitored value of the quartz oscillator for measurement; and   calculating a calibration coefficient using a ratio of the film thickness value A to the film thickness value B (A/B).   
     
     
         4 . A film formation method according to  claim 2 , wherein the film formation method is performed using a film formation apparatus comprising:
 a film formation source for heating the film forming material and for releasing vapors of the film forming material;   a moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position;   a quartz oscillator for measurement for monitoring an amount of the vapors of the film forming material released from the film formation source; and   a quartz oscillator for calibration for calibrating a measured value of the quartz oscillator for measurement,   wherein the moving part holds the quartz oscillator for measurement and the quartz oscillator for calibration.