Light emitting device and method for manufacturing the same

Abstract

Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.

1 - 15 . (canceled) 
     
     
         16 . A light emitting device comprising:
 a first conductive type semiconductor layer;   an active layer on the first conductive type semiconductor layer;   a second conductive type semiconductor layer on the active layer; and   a light extracting layer on the second conductive type semiconductor layer,   wherein the light extracting layer is formed on a peripheral portion of the second conductive type semiconductor layer.   
     
     
         17 . The light emitting device of  claim 16 , wherein the light extracting layer has a refractive index equal to or smaller than a refractive index of the second conductive type semiconductor layer. 
     
     
         18 . The light emitting device of  claim 16 , wherein the light extracting layer has a chemical formula of Al x Ga 1-x N y  (0≦x≦1). 
     
     
         19 . The light emitting device of  claim 16 , wherein the light extracting layer is formed along an edge of the second conductive type semiconductor layer while surrounding the second conductive type semiconductor layer. 
     
     
         20 . The light emitting device of  claim 16 , wherein the light extracting layer is formed at a side thereof with an inclined surface. 
     
     
         21 . The light emitting device of  claim 20 , wherein the inclined surface has an inclination angle of 58° to 63° with respect to a top surface of the second conductive type semiconductor layer. 
     
     
         22 . The light emitting device of  claim 16 , wherein the second conductive type semiconductor layer, the active layer and the first conductive type semiconductor layer are selectively etched such that a part of the first conductive type semiconductor layer is exposed upward and a first electrode layer is formed on the first conductive type semiconductor layer exposed upward. 
     
     
         23 . The light emitting device of  claim 16 , wherein the light extracting layer, the second conductive type semiconductor layer, the active layer and the first conductive type semiconductor layer are selectively etched such that a part of the first conductive type semiconductor layer is exposed in upward and lateral directions and a first electrode layer is formed on the first conductive type semiconductor layer exposed in the upward and lateral directions.