US2012100693A1PendingUtilityA1

Semiconductor device and manufacturing method thereof

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Assignee: ITOH YOSHIOPriority: Mar 31, 2008Filed: Sep 23, 2011Published: Apr 26, 2012
Est. expiryMar 31, 2028(~1.7 yrs left)· nominal 20-yr term from priority
Inventors:Yoshio ItohYoshimasa KushimaHirokazu Uchida
H10W 74/00H10W 72/9415H10W 72/9223H10W 72/01331H10W 72/942H10W 72/923H10W 72/20H10W 74/129H10W 74/121H10W 74/014H10W 72/00H10D 62/117H10W 72/9445H10W 70/656H10W 72/244H10W 72/012
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Claims

Abstract

A method for manufacturing a semiconductor device formed by fractionization and division after a plurality of semiconductor elements are formed over a semiconductor substrate, includes forming a first resist portion over the semiconductor substrate prior to its fractionization. Trenches are formed in areas for dicing the semiconductor substrate. A second resin portion different in composition from the first resin portion is formed in each of the trenches. The semiconductor substrate is diced with respect to the second resin portion with widths each narrower than the trench thereby to bring the semiconductor device into fractionization and division.

Claims

exact text as granted — not AI-modified
1 . A method for manufacturing a semiconductor device formed by fractionization and division after a plurality of semiconductor element are formed over a semiconductor substrate, comprising:
 forming a first resist portion over the semiconductor substrate prior to its fractionization;   forming trenches in areas for dicing the semiconductor substrate;   forming a second resin portion different in composition from the first resin portion in each of the trenches; and   dicing the semiconductor substrate with respect to the second resin portion with widths each narrower than the trench thereby to bring the semiconductor device into fractionization and division.   
     
     
         2 . The method according to  claim 1 , wherein the second resin portion is formed by a printing system. 
     
     
         3 . The method according to  claim 1 , wherein the second resin portion is formed by a dispense system. 
     
     
         4 . The method according to  claim 1 , wherein a filler is contained in the second resin portion, and an average particle diameter thereof ranges from 0.2 nm or more to 40 nm or less. 
     
     
         5 . The method according to  claim 1 , wherein a filler is contained in the second resin portion, and the content of the filler ranges from 40 mass % or more to 90 mass % or less with respect to the second resin portion. 
     
     
         6 . The method according to  claim 1 , wherein the width of each of the trenches ranges from 5 μm or more to 30 μm or less.

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