Method for using an otp storage device

Abstract

The invention provides a method of managing data updates in DOS-based data storage device having an OTP memory die that includes a code region having a first memory capacity and a code region access resolution and a data region having a second memory capacity and a data region access resolution. The second memory capacity is larger than the first memory capacity and the code region access resolution is finer than the data region access resolution. The method includes chronologically writing a log entry in the code region indicating the change in FAT and root directory for each change in user data written in the data region.

1 . Method of managing data updates in Disk Operating System (DOS)-based data storage device having an One Time Programmable (OTP) memory die that comprises
 a code region having a first memory capacity and a code region access resolution and a data region having a second memory capacity and a data region access resolution;   wherein said second memory capacity is larger than said first memory capacity, and wherein said code region access resolution is finer than said data region access resolution, the method comprising:   for each change in user data written in the data region, chronologically writing a log entry in the code region indicating the change in File Allocation Table (FAT) and root directory.   
     
     
         2 . The method of  claim 1  wherein said log entry comprises: an index associating said log entry with one of the FAT or the root directory; and a code indicating the change in the FAT or root directory. 
     
     
         3 . The method of  claim 2  wherein said index comprises 16 bits. 
     
     
         4 . The method of  claim 2  wherein said code comprises 16 bits. 
     
     
         5 . The method of  claim 1  further comprising:
 per host request to read or update the FAT or the root directory, fetching the last log entry associated with said requested data from said chronological list of log entries. 
 
     
     
         6 . The method of  claim 5  wherein fetching the last log entry associated with said requested data comprises backward searching the list of log entries. 
     
     
         7 . The method of  claim 5  wherein fetching the last log entry associated with said requested data is performed by a controller incorporated with said OTP memory die. 
     
     
         8 . The method of  claim 7  wherein said controller and said OTP memory die are processed on different dies. 
     
     
         9 . The method of  claim 7  wherein said controller and said OTP memory die are processed on the same die. 
     
     
         10 . The methods of  claim 1  wherein the OTP memory die comprises Nitride Read Only Memory (NROM) cells. 
     
     
         11 . The method of  claim 10  wherein NROM cells density in the code region comprises 1 bit per cell. 
     
     
         12 . The method of  claim 10  wherein NROM cell density in the code region comprises 2 bits per cell. 
     
     
         13 . The method of  claim 10  wherein NROM cell density in the data region comprising at least 2 bits per cell. 
     
     
         14 . The method of  claim 10  wherein NROM cell density in said data region comprising at least 4 bits per cell. 
     
     
         15 . The method of  claim 10  wherein one command minimal data size accessible in the code region is up to 64 bits. 
     
     
         16 . The method of  claim 10  wherein one command minimal data size accessible in the code region is up to 16 bits. 
     
     
         17 . The method of  claim 10  wherein one command minimal data size accessible in the code region is up to 8 bits. 
     
     
         18 . The method of  claim 10  wherein one command minimal data size accessible in the code region is 1 bit. 
     
     
         19 . The method of  claim 10  wherein minimal data size accessible in the data region in one command is at least 512 bytes. 
     
     
         20 . The method of  claim 10  wherein the first memory capacity is no more than 1% of said second memory capacity.