System and method for commercial fabrication of patterned media

Abstract

A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.

1 . A system for fabricating patterned media disks, comprising:
 a plurality of processing chambers, each having an independent vacuum environment;   a plurality of valves, each positioned between two processing chambers;   a transport system for transporting a disk carrier from one chamber to directly the next through the valves;   wherein the plurality of processing chambers comprises:
 at least one etching chamber; 
 at least one refill sputtering chamber; and, 
 at least one etch back chamber. 
   
     
     
         2 . The system of  claim 1 , further comprising a cooling chamber positioned following the etch chamber. 
     
     
         3 . The system of  claim 1 , wherein the etch chamber comprises:
 a main chamber body having a first side and a second side opposite the first side;   a precursor gas delivery assembly coupled to the first side;   a movable cathode assembly coupled to the second side.   
     
     
         4 . The system of  claim 3 , wherein the movable cathode assumes a retractable position during disk transport and assumes an extended position during etch process. 
     
     
         5 . The system of  claim 3 , wherein the transport system comprises tracks positioned within the main chamber body and configured for supporting the disk carrier, such that a disk held by the disk carrier is positioned between the precursor gas delivery assembly and the movable cathode assembly. 
     
     
         6 . The system of  claim 5 , wherein the tracks are positioned such that during etching the movable cathode assembly is moved close to the disk, but does not touch it. 
     
     
         7 . The system of  claim 6 , wherein the tracks are configured to transport a disk carrier such that the disk is held in a vertical orientation during transport and during processing. 
     
     
         8 . The system of  claim 1 , wherein the plurality of processing chambers comprise at least a first and a second etch chambers, wherein:
 the first etch chamber comprises:
 a first main chamber body having a first side and a second side opposite the first side; 
 a first precursor gas delivery assembly coupled to the first side; 
 a first movable cathode assembly coupled to the second side; and, 
   the second etch chamber follows the first etch chamber and comprises:
 a second main chamber body having a third side and a fourth side, the third side being opposite the second side and the fourth side being opposite the first side; 
 a second precursor gas delivery assembly coupled to the fourth side; 
 a second movable cathode assembly coupled on the third side. 
   
     
     
         9 . The system of  claim 8 , wherein the transport system is configured to transport the disk carrier such that the disk is held in a vertical orientation during transport and during processing, wherein one surface of the disk is etched in the first etch chamber and the opposite surface of the disk is etched in the second etch chamber. 
     
     
         10 . The system of  claim 9 , further comprising a cooling chamber positioned between the first and the second etch chambers. 
     
     
         11 . The system of  claim 10 , further comprising a second cooling chamber positioned after the second etch chamber. 
     
     
         12 . The system of  claim 9 , further comprising a cooling chamber positioned after the second etch chambers. 
     
     
         13 . The system of  claim 1 , further comprising a hard mask sputtering chamber. 
     
     
         14 . The system of  claim 1 , further comprising a hard mask etching chamber. 
     
     
         15 . The system of  claim 1 , further comprising at least one cooling chamber. 
     
     
         16 . The system of  claim 1 , wherein the etching chamber is configured for magnetic layer etching to thereby form patterned magnetic layer, the refill sputtering chamber is configured for depositing carbon refill layer to fill the patterned magnetic layer, and the etch back chamber is configured for etching back the carbon refill layer to form a relatively flat top surface. 
     
     
         17 . The system of  claim 1 , further comprising a sputtering chamber configured for forming a hard protective layer over the flat top surface. 
     
     
         18 . The system of  claim 17 , wherein the sputtering chamber is configured for forming a hard protective layer by depositing a carbon overcoat. 
     
     
         19 . The system of  claim 16 , further comprising a hard mask etching chamber positioned ahead of the etching chamber and configured for etching a hard mask. 
     
     
         20 . The system of  claim 19 , further comprising a resist trim chamber positioned ahead of the hard mask etching chamber.