Solid state thermoelectric power converter

Abstract

High efficiency conversion of heat energy to electrical energy is achieved using a ring of metallic components and anodically sliced, reduced barriers, high purity n-type and p-type semiconductor wafers. Energy produced by heating one set of fins and cooling another set is extracted from a ring of bismuth telluride based n-type wafers and antimony telluride based p-type wafers using make-before-break control of MOSfet switch banks. Standard AC frequencies and DC output result from rectification of make-before-break high frequency switched very high currents in the ring and a DC to AC converter. Solar energy stored in porcelain fragments extends the time that solar energy can be used as the heat source for the thermoelectric generator device.

1 - 50 . (canceled) 
     
     
         51 . A method for making reduced barriers n-type semiconductor material casting of:
 (a) high purity elemental selenium material in an amount of from five percent (5%) to twelve percent (12%) by weight;   (b) high purity elemental bismuth material in an amount of forty percent (40%) to sixty percent (60%) by weight; and   (c) a remaining weight percentage being of high purity elemental tellurium material,   
       the method comprising the steps of:
 (a) mixing:
 i. high purity elemental selenium material; 
 ii. high purity elemental bismuth material; and 
 iii. high purity elemental tellurium material, 
 
  wherein the elemental material weights are respectively within the preceding percentages; 
 (b) heating said mixture to a temperature of at least eight-hundred degrees centigrade (800° C.) whereby said mixture melts; 
 (c) preparing a mold for receiving said melted mixture by compressing in a holding framework around an elongated rectangularly-shaped pilot boule replica that has been inserted at a center of said holding framework to a depth of eighty percent (80%) of the length of the boule replica a mixture of:
 i. fly ash beads that float on water; and 
 ii. five percent (5%) to twenty percent (20%) of low-dropping point kiln grease; 
 
 (d) inserting a single crystal seed at the top of said mold adjacent to a corner of said pilot boule replica with a narrow reduced barriers face of said single crystal seed touching the the pilot boule replica; 
 (e) carefully removing said pilot boule replica from said mold by gentle shaking and twisting and slow extraction of said pilot boule replica; 
 (f) pouring said melted mixture into said mold; 
 (g) allowing said mixture to cool; and 
 (h) removing said reduced barrier n-type semiconductor material casting together with the attached reduced barriers seed from said mold. 
 
     
     
         52 . A method for making reduced barriers p-type semiconductor material casting of:
 (a) high purity elemental bismuth material in an amount of eight percent (8%) to twelve percent (12%) by weight;   (b) high purity elemental antimony material in an amount of eight percent (28%) to thirty-two percent (32%) by weight; and   (c) the remaining weight percentage being of high purity elemental tellurium material,   
       the method comprising the steps of:
 (a) mixing:
 i. high purity elemental antimony; material 
 ii. high purity elemental bismuth material; and 
 iii. high purity elemental tellurium material, 
 
  wherein the elemental material weights are respectively within the preceding percentages; 
 (b) heating said mixture to a temperature of at least eight-hundred degrees centigrade (800° C.) whereby said mixture melts; 
 (c) preparing a mold for receiving said melted mixture by compressing in a holding framework around an elongated rectangularly-shaped pilot boule replica that has been inserted at a center of said holding framework to a depth of eighty percent (80%) of the length of the boule replica a mixture of:
 i. fly ash beads that float on water; and 
 ii. five percent (5%) to twenty percent (20%) of low-dropping point kiln grease; 
 
 (d) inserting a single crystal seed at the top of said mold adjacent to a corner of said pilot boule replica with a narrow reduced barriers face of said single crystal seed touching the pilot boule replica; 
 (e) carefully removing said pilot boule replica from said mold by gentle shaking and twisting and slow extraction of said pilot boule replica; 
 (f) pouring said melted mixture into said mold; 
 (g) allowing said mixture to cool; and 
 (h) removing said reduced barrier n-type semiconductor material casting together with the attached reduced barriers seed from said mold. 
 
     
     
         52 - 56 . (canceled)