US2012080669A1PendingUtilityA1

Light emitting device and manufacturing method thereof

Assignee: YAMAZAKI SHUNPEIPriority: Jun 11, 2002Filed: Dec 9, 2011Published: Apr 5, 2012
Est. expiryJun 11, 2022(expired)· nominal 20-yr term from priority
H10K 59/874H10K 50/846H10K 59/8731H10K 59/35H10K 50/8445H10K 50/844H10K 2102/3026H10K 59/12
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Claims

Abstract

A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312 a , a stress relaxation layer 312 b having transparency and a hygroscopic property, and an inorganic insulating film 312 c are repeatedly laminated over a cathode. The stress relaxation layer 312 b having transparency and the hygroscopic property uses at least one film selected from the group consisting of a film comprising a same material as that of a layer 310 , containing an organic compound, sandwiched between a cathode and an anode, a layer capable of being formed by vapor deposition, and a layer capable of being formed by coating.

Claims

exact text as granted — not AI-modified
1 . A bottom emission light emitting device comprising:
 a first substrate;   a light emitting element over the first substrate, the light emitting element comprising:
 an anode over the first substrate; 
 an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and 
 a cathode over the electroluminescent layer; 
   a layer over the light emitting element, the layer including tris-8-quinolinolate aluminum complex; and   a second substrate over the layer,   wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.   
     
     
         2 . The bottom emission light emitting device according to  claim 1 , further comprising a first inorganic insulating layer over the cathode. 
     
     
         3 . The bottom emission light emitting device according to  claim 1 , further comprising a second inorganic insulating layer over the layer. 
     
     
         4 . The bottom emission light emitting device according to  claim 1 , wherein a top surface of the cathode is in contact with the layer. 
     
     
         5 . The bottom emission light emitting device according to  claim 1 , further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element. 
     
     
         6 . The bottom emission light emitting device according to  claim 1 , wherein the layer is formed by vapor deposition. 
     
     
         7 . The bottom emission light emitting device according to  claim 1 , wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating. 
     
     
         8 . A semiconductor device comprising the bottom emission light emitting device of  claim 1 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 
     
     
         9 . A bottom emission light emitting device comprising:
 a first substrate;   a light emitting element over the first substrate, the light emitting element comprises:
 an anode over the first substrate; 
 an electroluminescent layer over the anode, the electroluminescent layer includes an organic compound; and 
 a cathode over the electroluminescent layer; 
   a layer over the light emitting element, the layer includes the organic compound; and   a second substrate over the layer,   wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.   
     
     
         10 . The bottom emission light emitting device according to  claim 9 , further comprising a first inorganic insulating layer over the cathode. 
     
     
         11 . The bottom emission light emitting device according to  claim 9 , further comprising a second inorganic insulating layer over the layer. 
     
     
         12 . The bottom emission light emitting device according to  claim 9 , wherein a top surface of the cathode is in contact with the layer. 
     
     
         13 . The bottom emission light emitting device according to  claim 9 , wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate. 
     
     
         14 . The bottom emission light emitting device according to  claim 9 , wherein the layer is formed by vapor deposition. 
     
     
         15 . The bottom emission light emitting device according to  claim 9 , wherein the layer is a polymeric material layer containing the organic compound, obtained by coating. 
     
     
         16 . The bottom emission light emitting device according to  claim 9 , wherein the organic compound is at least one material selected from a group consisting of 4,4′-bisbiphenyl, bathocuproin, and 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine. 
     
     
         17 . A semiconductor device comprising the bottom emission light emitting device of  claim 9 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 
     
     
         18 . A bottom emission light emitting device comprising:
 a first substrate;   a light emitting element over the first substrate, the light emitting element comprises:
 an anode over the first substrate; 
 an electroluminescent layer over the anode, the electroluminescent layer includes tris-8-quinolinolate aluminum complex; and 
 a cathode over the electroluminescent layer; 
   a layer over the light emitting element, the layer includes tris-8-quinolinolate aluminum complex; and   a second substrate over the layer,   wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.   
     
     
         19 . The bottom emission light emitting device according to  claim 18 , further comprising a first inorganic insulating layer over the cathode. 
     
     
         20 . The bottom emission light emitting device according to  claim 18 , further comprising a second inorganic insulating layer over the layer. 
     
     
         21 . The bottom emission light emitting device according to  claim 18 , wherein a top surface of the cathode is in contact with the layer. 
     
     
         22 . The bottom emission light emitting device according to  claim 18 , wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate. 
     
     
         23 . The bottom emission light emitting device according to  claim 18 , wherein the layer is formed by vapor deposition. 
     
     
         24 . The bottom emission light emitting device according to  claim 18 , wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating. 
     
     
         25 . A semiconductor device comprising the bottom emission light emitting device of  claim 18 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 
     
     
         26 . A bottom emission light emitting device comprising:
 a first substrate;   a light emitting element over the first substrate, the light emitting element comprising:
 an anode over the first substrate; 
 an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and 
 a cathode over the electroluminescent layer; 
   a layer over the light emitting element, the layer including at least one material selected from a group consisting of 4,4′-bisbiphenyl, bathocuproin, and 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, and   a second substrate over the layer,   wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.   
     
     
         27 . The bottom emission light emitting device according to  claim 26 , further comprising a first inorganic insulating layer over the cathode. 
     
     
         28 . The bottom emission light emitting device according to  claim 26 , further comprising a second inorganic insulating layer over the layer. 
     
     
         29 . The bottom emission light emitting device according to  claim 26 , wherein a top surface of the cathode is in contact with the layer. 
     
     
         30 . The bottom emission light emitting device according to  claim 26 , further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element. 
     
     
         31 . The bottom emission light emitting device according to  claim 26 , wherein the layer is formed by vapor deposition. 
     
     
         32 . The bottom emission light emitting device according to  claim 26 , wherein the layer is a polymeric material layer containing the one material selected from a group consisting of 4,4′-bisbiphenyl, bathocuproin, and 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, obtained by coating. 
     
     
         33 . A semiconductor device comprising the bottom emission light emitting device of  claim 26 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 
     
     
         34 . A bottom emission light emitting device comprising:
 a first substrate;   a light emitting element over the first substrate, the light emitting element comprising:
 an anode over the first substrate; 
 an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and 
 a cathode over the electroluminescent layer; and 
   a layer over the light emitting element, the layer including tris-8-quinolinolate aluminum complex;   a space over the layer; and   a second substrate over the space,   wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.   
     
     
         35 . The bottom emission light emitting device according to  claim 34 , further comprising a first inorganic insulating layer over the cathode. 
     
     
         36 . The bottom emission light emitting device according to  claim 34 , further comprising a second inorganic insulating layer over the layer. 
     
     
         37 . The bottom emission light emitting device according to  claim 34 , wherein a top surface of the cathode is in contact with the layer. 
     
     
         38 . The bottom emission light emitting device according to  claim 34 , further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element. 
     
     
         39 . The bottom emission light emitting device according to  claim 34 , wherein the layer is formed by vapor deposition. 
     
     
         40 . The bottom emission light emitting device according to  claim 34 , wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating. 
     
     
         41 . A semiconductor device comprising the bottom emission light emitting device of  claim 34 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 
     
     
         42 . The bottom emission light emitting device according to  claim 34 , wherein the space is filled with an inert gas. 
     
     
         43 . A bottom emission light emitting device comprising:
 a first substrate;   a light emitting element over the first substrate, the light emitting element comprises:
 an anode over the first substrate; 
 an electroluminescent layer over the anode, the electroluminescent layer includes an organic compound; and 
 a cathode over the electroluminescent layer; 
   a layer over the light emitting element, the layer includes the organic compound;   a space over the layer; and   a second substrate over the space,   wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.   
     
     
         44 . The bottom emission light emitting device according to  claim 43 , further comprising a first inorganic insulating layer over the cathode. 
     
     
         45 . The bottom emission light emitting device according to  claim 43 , further comprising a second inorganic insulating layer over the layer. 
     
     
         46 . The bottom emission light emitting device according to  claim 43 , wherein a top surface of the cathode is in contact with the layer. 
     
     
         47 . The bottom emission light emitting device according to  claim 43 , wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate. 
     
     
         48 . The bottom emission light emitting device according to  claim 43 , wherein the layer is formed by vapor deposition. 
     
     
         49 . The bottom emission light emitting device according to  claim 43 , wherein the layer is a polymeric material layer containing the organic compound, obtained by coating. 
     
     
         50 . The bottom emission light emitting device according to  claim 43 , wherein the organic compound is at least one material selected from a group consisting of 4,4′-bisbiphenyl, bathocuproin, and 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine. 
     
     
         51 . A semiconductor device comprising the bottom emission light emitting device of  claim 43 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal. 
     
     
         52 . The bottom emission light emitting device according to  claim 43 , wherein the space is filled with an inert gas.

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