Light emitting device and manufacturing method thereof
Abstract
A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312 a , a stress relaxation layer 312 b having transparency and a hygroscopic property, and an inorganic insulating film 312 c are repeatedly laminated over a cathode. The stress relaxation layer 312 b having transparency and the hygroscopic property uses at least one film selected from the group consisting of a film comprising a same material as that of a layer 310 , containing an organic compound, sandwiched between a cathode and an anode, a layer capable of being formed by vapor deposition, and a layer capable of being formed by coating.
Claims
exact text as granted — not AI-modified1 . A bottom emission light emitting device comprising:
a first substrate; a light emitting element over the first substrate, the light emitting element comprising:
an anode over the first substrate;
an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and
a cathode over the electroluminescent layer;
a layer over the light emitting element, the layer including tris-8-quinolinolate aluminum complex; and a second substrate over the layer, wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.
2 . The bottom emission light emitting device according to claim 1 , further comprising a first inorganic insulating layer over the cathode.
3 . The bottom emission light emitting device according to claim 1 , further comprising a second inorganic insulating layer over the layer.
4 . The bottom emission light emitting device according to claim 1 , wherein a top surface of the cathode is in contact with the layer.
5 . The bottom emission light emitting device according to claim 1 , further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element.
6 . The bottom emission light emitting device according to claim 1 , wherein the layer is formed by vapor deposition.
7 . The bottom emission light emitting device according to claim 1 , wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating.
8 . A semiconductor device comprising the bottom emission light emitting device of claim 1 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.
9 . A bottom emission light emitting device comprising:
a first substrate; a light emitting element over the first substrate, the light emitting element comprises:
an anode over the first substrate;
an electroluminescent layer over the anode, the electroluminescent layer includes an organic compound; and
a cathode over the electroluminescent layer;
a layer over the light emitting element, the layer includes the organic compound; and a second substrate over the layer, wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.
10 . The bottom emission light emitting device according to claim 9 , further comprising a first inorganic insulating layer over the cathode.
11 . The bottom emission light emitting device according to claim 9 , further comprising a second inorganic insulating layer over the layer.
12 . The bottom emission light emitting device according to claim 9 , wherein a top surface of the cathode is in contact with the layer.
13 . The bottom emission light emitting device according to claim 9 , wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate.
14 . The bottom emission light emitting device according to claim 9 , wherein the layer is formed by vapor deposition.
15 . The bottom emission light emitting device according to claim 9 , wherein the layer is a polymeric material layer containing the organic compound, obtained by coating.
16 . The bottom emission light emitting device according to claim 9 , wherein the organic compound is at least one material selected from a group consisting of 4,4′-bisbiphenyl, bathocuproin, and 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine.
17 . A semiconductor device comprising the bottom emission light emitting device of claim 9 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.
18 . A bottom emission light emitting device comprising:
a first substrate; a light emitting element over the first substrate, the light emitting element comprises:
an anode over the first substrate;
an electroluminescent layer over the anode, the electroluminescent layer includes tris-8-quinolinolate aluminum complex; and
a cathode over the electroluminescent layer;
a layer over the light emitting element, the layer includes tris-8-quinolinolate aluminum complex; and a second substrate over the layer, wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.
19 . The bottom emission light emitting device according to claim 18 , further comprising a first inorganic insulating layer over the cathode.
20 . The bottom emission light emitting device according to claim 18 , further comprising a second inorganic insulating layer over the layer.
21 . The bottom emission light emitting device according to claim 18 , wherein a top surface of the cathode is in contact with the layer.
22 . The bottom emission light emitting device according to claim 18 , wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate.
23 . The bottom emission light emitting device according to claim 18 , wherein the layer is formed by vapor deposition.
24 . The bottom emission light emitting device according to claim 18 , wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating.
25 . A semiconductor device comprising the bottom emission light emitting device of claim 18 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.
26 . A bottom emission light emitting device comprising:
a first substrate; a light emitting element over the first substrate, the light emitting element comprising:
an anode over the first substrate;
an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and
a cathode over the electroluminescent layer;
a layer over the light emitting element, the layer including at least one material selected from a group consisting of 4,4′-bisbiphenyl, bathocuproin, and 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, and a second substrate over the layer, wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.
27 . The bottom emission light emitting device according to claim 26 , further comprising a first inorganic insulating layer over the cathode.
28 . The bottom emission light emitting device according to claim 26 , further comprising a second inorganic insulating layer over the layer.
29 . The bottom emission light emitting device according to claim 26 , wherein a top surface of the cathode is in contact with the layer.
30 . The bottom emission light emitting device according to claim 26 , further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element.
31 . The bottom emission light emitting device according to claim 26 , wherein the layer is formed by vapor deposition.
32 . The bottom emission light emitting device according to claim 26 , wherein the layer is a polymeric material layer containing the one material selected from a group consisting of 4,4′-bisbiphenyl, bathocuproin, and 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, obtained by coating.
33 . A semiconductor device comprising the bottom emission light emitting device of claim 26 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.
34 . A bottom emission light emitting device comprising:
a first substrate; a light emitting element over the first substrate, the light emitting element comprising:
an anode over the first substrate;
an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and
a cathode over the electroluminescent layer; and
a layer over the light emitting element, the layer including tris-8-quinolinolate aluminum complex; a space over the layer; and a second substrate over the space, wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.
35 . The bottom emission light emitting device according to claim 34 , further comprising a first inorganic insulating layer over the cathode.
36 . The bottom emission light emitting device according to claim 34 , further comprising a second inorganic insulating layer over the layer.
37 . The bottom emission light emitting device according to claim 34 , wherein a top surface of the cathode is in contact with the layer.
38 . The bottom emission light emitting device according to claim 34 , further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element.
39 . The bottom emission light emitting device according to claim 34 , wherein the layer is formed by vapor deposition.
40 . The bottom emission light emitting device according to claim 34 , wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating.
41 . A semiconductor device comprising the bottom emission light emitting device of claim 34 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.
42 . The bottom emission light emitting device according to claim 34 , wherein the space is filled with an inert gas.
43 . A bottom emission light emitting device comprising:
a first substrate; a light emitting element over the first substrate, the light emitting element comprises:
an anode over the first substrate;
an electroluminescent layer over the anode, the electroluminescent layer includes an organic compound; and
a cathode over the electroluminescent layer;
a layer over the light emitting element, the layer includes the organic compound; a space over the layer; and a second substrate over the space, wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.
44 . The bottom emission light emitting device according to claim 43 , further comprising a first inorganic insulating layer over the cathode.
45 . The bottom emission light emitting device according to claim 43 , further comprising a second inorganic insulating layer over the layer.
46 . The bottom emission light emitting device according to claim 43 , wherein a top surface of the cathode is in contact with the layer.
47 . The bottom emission light emitting device according to claim 43 , wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate.
48 . The bottom emission light emitting device according to claim 43 , wherein the layer is formed by vapor deposition.
49 . The bottom emission light emitting device according to claim 43 , wherein the layer is a polymeric material layer containing the organic compound, obtained by coating.
50 . The bottom emission light emitting device according to claim 43 , wherein the organic compound is at least one material selected from a group consisting of 4,4′-bisbiphenyl, bathocuproin, and 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine.
51 . A semiconductor device comprising the bottom emission light emitting device of claim 43 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.
52 . The bottom emission light emitting device according to claim 43 , wherein the space is filled with an inert gas.Join the waitlist — get patent alerts
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