US2012067856A1PendingUtilityA1

Laser irradiation apparatus, laser irradiation method, fabrication method for thin film semiconductor device and fabrication method for display apparatus

Assignee: OMOTO KEISUKEPriority: Aug 29, 2006Filed: Nov 30, 2011Published: Mar 22, 2012
Est. expiryAug 29, 2026(~0.1 yrs left)· nominal 20-yr term from priority
H01S 3/005B23K 26/066B23K 26/0738
45
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Claims

Abstract

A laser irradiation apparatus, including: an optical system configured to form laser light of a linear cross section to be irradiated on an irradiation object; and a cutting member having a light blocking portion configured to block the laser light formed in the linear cross section by the optical system to cut the laser light so as to have a predetermined length along a line longitudinal direction; the light blocking portion having a plurality of fins provided on the light blocking portion thereof so as to fetch and absorb the laser light.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A for making a thin film semiconductor device, the method comprising the steps of:
 forming laser light of a linear cross section;   cutting the laser light of the linear cross section so as to have a predetermined length in a line longitudinal direction using a cutting member which has a light blocking portion configured to block the laser light; and   irradiating the laser light of the predetermined length in the line longitudinal direction on a semiconductor film to crystallize the semiconductor film,   wherein,
 the cutting member has a plurality of fins on the light blocking portion, and 
 the fins are configured to fetch and absorb the laser light. 
   
     
     
         2 . A for making a display apparatus, the method comprising the steps of:
 forming laser light of a linear cross section;   cutting the laser light of the linear cross section so as to have a predetermined length in a line longitudinal direction using a cutting member which has a light blocking portion configured to block the laser light; and   irradiating the laser light of the predetermined length in the line longitudinal direction on a semiconductor film to crystallize the semiconductor film,   wherein,
 the cutting member has a plurality of fins on the light blocking portion thereof, and 
 the fins are configured to fetch and absorb the laser light.

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