Method and system for providing a reliable light emitting diode semiconductor device

Abstract

A method and a system for a reliable LED semiconductor device are provided. In one embodiment, the device comprises a carrier, a light emitting diode disposed on the carrier, an encapsulating material disposed over the light emitting diode and the carrier, at least one through connection formed in the encapsulating material, and a metallization layer disposed and structured over the at least one through connection.

What is claimed: 
     
         1 . A semiconductor device comprising:
 a carrier;   a light emitting diode disposed on the carrier;   an encapsulating material disposed over the light emitting diode;   at least one through connection formed in the encapsulating material; and   a metallization layer disposed and structured over the at least one through connection.   
     
     
         2 . The device of  claim 1 , further comprising:
 a metal layer disposed over the encapsulating material.   
     
     
         3 . The device of  claim 1 , wherein the encapsulating material is a polymer material. 
     
     
         4 . The device of  claim 3 , wherein the polymer material is acrylic resin, ormocers, silicon epoxy copolymer or epoxy-acrylate copolymer. 
     
     
         5 . The device of  claim 3 , wherein the polymer material is epoxy resin. 
     
     
         6 . The device of  claim 1 , wherein the encapsulating material is a low light absorbing material absorbing light in a full wavelength range. 
     
     
         7 . The device of  claim 6 , wherein the encapsulating material is a low light absorbing material absorbing light in a short wavelength range of a full wavelength range. 
     
     
         8 . The device of  claim 1 , wherein the encapsulating material is highly transparent, and has a low coefficient of thermal expansion. 
     
     
         9 . The device of  claim 1 , wherein the at least one through connection is at least one via opening to at least one contact of the light emitting diode. 
     
     
         10 . The device of  claim 1 , further comprising:
 an organic protective layer disposed over the light emitting diode.   
     
     
         11 . The device of  claim 9 , further comprising:
 an optical conversion layer disposed between the at least one contact and an organic sacrificial layer of the light emitting diode.   
     
     
         12 . A semiconductor device comprising:
 a carrier;   a light emitting diode and at least one semiconductor chip disposed on the carrier;   a first type of encapsulating material disposed over the light emitting diode;   a second type of encapsulating material disposed over at least one of the at least one semiconductor chip and the carrier;   at least one through connection formed in the encapsulating material; and   a metallization layer disposed and structured over the at least one through connection.   
     
     
         13 . The device of  claim 12 , wherein the first type of encapsulating material is a polymer material. 
     
     
         14 . The device of  claim 12 , wherein the first type of encapsulating material and the second type of encapsulating material is a same material. 
     
     
         15 . The device of  claim 12 , wherein the second type of encapsulating material is an epoxy. 
     
     
         16 . The device of  claim 12 , wherein the first type of encapsulating material is a low light absorbing material absorbing light in a full wavelength range. 
     
     
         17 . The device of  claim 16 , wherein the first type of encapsulating material is a low light absorbing material absorbing light in a short wavelength range of the full wavelength range. 
     
     
         18 . The device of  claim 12 , wherein the first type of encapsulating material is highly transparent and has a low coefficient of thermal expansion. 
     
     
         19 . The device of  claim 12 , wherein the at least one semiconductor chip comprises a power semiconductor chip and an integrated circuit. 
     
     
         20 . The device of  claim 12 , wherein the at least one through connection is at least one via opening to at least one contact of the light emitting diode and at least one of the at least one semiconductor chip. 
     
     
         21 . A method for forming a semiconductor device comprising:
 providing a carrier;   disposing at least one light emitting diode on the carrier;   encapsulating the at least one light emitting diode with an encapsulating material;   forming at least one through connection in the encapsulating material; and   forming a metallization layer over the at least one through connection.   
     
     
         22 . The method of  claim 21 , wherein encapsulating the at least one light emitting diode and the carrier with an encapsulating material comprises:
 encapsulating the at least one light emitting diode and the carrier with an encapsulating material having a low coefficient of thermal expansion.   
     
     
         23 . The method of  claim 21 , wherein encapsulating the at least one light emitting diode with an encapsulating material comprises:
 encapsulating the at least one light emitting diode with a low light absorbing material absorbing light in a full wavelength range.   
     
     
         24 . The method of  claim 23 , wherein encapsulating the at least one light emitting diode with an encapsulating material comprises:
 encapsulating the at least one light emitting diode with a low light absorbing material absorbing light in a short wavelength range of the full wavelength range.   
     
     
         25 . The method of  claim 21 , wherein encapsulating the at least one light emitting diode with an encapsulating material comprises:
 encapsulating the at least one light emitting diode with an encapsulating material that is highly transparent.   
     
     
         26 . The method of  claim 21 , further comprising:
 forming a metal layer over the encapsulating material.   
     
     
         27 . The method of  claim 26 , wherein forming at least one through connection in the encapsulating material comprises:
 forming at least one via opening in the encapsulating material and the metal layer.   
     
     
         28 . The method of  claim 21 , wherein forming a metallization layer over the at least one through connection comprises:
 filling the at least one through connection with a metal; and   removing portions of the metal to expose the encapsulating material.   
     
     
         29 . The method of  claim 21 , further comprising:
 encapsulating at least one semiconductor chip and the carrier with the encapsulating material   
     
     
         30 . The method of  claim 21 , further comprising:
 encapsulating at least one semiconductor chip and the carrier with an encapsulating material different from the encapsulating material for encapsulating the at least one light emitting diode.