US2012025171A1PendingUtilityA1

Electronic Component with at Least One Organic Layer Arrangement

Assignee: CANZLER TOBIASPriority: Jan 11, 2006Filed: Dec 21, 2007Published: Feb 2, 2012
Est. expiryJan 11, 2026(expired)· nominal 20-yr term from priority
H10K 59/80522H10K 59/80521H10K 59/80516B82Y 10/00H10K 85/6572H10K 85/211H10K 85/342H10K 85/344H10K 50/165H10K 85/631H10K 85/324H10K 50/155H10K 71/30
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Claims

Abstract

An electronic component, having an anode, a cathode and at least one organic layer arrangement, arranged between the anode and cathode and is in electrical contact with the anode and cathode and has at least one of the following: a zone which generates electrical charges upon application of an electric potential to the anode and cathode and has an np-junction, which is formed with a layer of a p-type organic semiconductor material and an n-doped layer of an n-type organic semiconductor material, which is in contact with a conductive layer of the anode, and a zone which generates further electrical charges upon application of the electric potential to the anode and cathode and has a pn-junction, which is formed with a layer of an n-type organic semiconductor material and a p-doped layer of a p-type organic semiconductor material, which is in contact with a conductive layer of the cathode.

Claims

exact text as granted — not AI-modified
1 . An electronic component, in particular a light-emitting electronic component having an anode, a cathode and at least one organic layer arrangement, which is arranged between the anode and the cathode and is in electrical contact with the anode and the cathode and which comprises at least one of the following zones:
 a zone which generates further electrical charges upon application of the electric potential to the anode and the cathode and has a pn-junction, which is firmed with a layer of an n-type organic semiconductor material and a p-doped layer of a p-type organic semiconductor material, which is in contact with a conductive layer of the cathode.   
     
     
         2 . The component according to  claim 1 , characterized in that the layer of n-type organic semiconductor material is a further n-doped layer. 
     
     
         3 . The component according to  claim 1  or  claim 2 , characterized in that the layer of p-type organic semiconductor material is a further p-doped layer. 
     
     
         4 . The component according to any one of the preceding claims, characterized in that the layer of n-type organic semiconductor material is formed as at least one layer type selected from the following groups of layer types: electron transport layer and hole blocking layer. 
     
     
         5 . The component according to any one of the preceding claims, characterized in that the layer of p-type organic semiconductor material is formed as at least one layer type selected from the following groups of layer types: hole transport layer and electron blocking layer. 
     
     
         6 . The component according to any one of the preceding claims, characterized in that the at least one organic layer arrangement comprises an optionally single-layer or multilayer light-emitting zone. 
     
     
         7 . The component according to  claim 6 , characterized in that the layer of p-type organic semiconductor material is formed as part of the light-emitting zone. 
     
     
         8 . The component according to  claim 6  or  claim 7 , characterized in that the layer of n-type organic semiconductor material is formed as part of the light-emitting zone. 
     
     
         9 . The component according to any one of the preceding claims, characterized in that the layer of n-type organic semiconductor material is of multilayer construction. 
     
     
         10 . The component according to any one of the preceding claims, characterized in that the layer of p-type organic semiconductor material is of multilayer construction. 
     
     
         11 . The component according to any one of the preceding claims, characterized in that the p-type organic semiconductor material of the p-doped layer is an organic semiconductor material selected from the following group of organic semiconductor materials: triarylamine, phthalocyanine, an organometallic complex compound such as cobaltocene, a metal complex such as Cr(hpp) 4 , a free radical such as pentaphenylcyclopentadienyl and an organic reducing agent such as tetrathiafulvalene derivatives or amino-substituted polycycles. 
     
     
         12 . The electronic component according to any one of the preceding claims, implemented as a component selected from the following group of components: organic light-emitting component, organic diode, organic solar cell, organic transistor and organic light-emitting diode.

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