Light emitting diode devices and manufacturing method thereof

Abstract

A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

1 . A light emitting diode device comprising:
 a stacked epitaxial structure comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer;   a heat-conductive plate disposed on the first semiconductor layer; and   a seed layer disposed between the first semiconductor layer and the heat-conductive plate.   
     
     
         2 . The light emitting diode device as claimed in  claim 1 , wherein the first semiconductor layer and the second semiconductor layer are an n-type epitaxial layer and a p-type epitaxial layer, respectively, or are a p-type epitaxial layer and an n-type epitaxial layer, respectively. 
     
     
         3 . The light emitting diode device as claimed in  claim 1 , wherein the heat-conductive plate comprises at least, Ni, Cu, Co, Au, Al or a heat-conductive metal, or the heat conductive plate comprises a Cu—Ni—Cu or Ni—Cu—Ni layer. 
     
     
         4 . The light emitting diode device as claimed in  claim 1 , wherein the seed layer sequentially comprises a reflective layer, an ohmic contact layer, and a metal bonding layer. 
     
     
         5 . The light emitting diode device as claimed in  claim 4 , wherein the material of the reflective layer comprises Pt, Au, Ag, Cr/Al, Ni/Al, Pd, Ti/Al, Ti/Ag, Cr/Pt/Au a dielectric material, a metal or any combination thereof, and the ohmic contact layer comprises Ni/Au, ITO, IZO, or AZO. 
     
     
         6 . The light emitting diode device as claimed in  claim 1 , wherein the seed layer is an ohmic contact layer with a function of reflective metal layer, wherein the material of the seed layer comprises Al, Ge, Cr, Pt, Au, Ag, Ni/Cr, Cr/Au, Ni/Ag, Pd, Ti/Au, Ti/Ag, Cr/Pt/Au, Ti/Al/Ti/Au, Au/Ge/Ni, Ti/Pt/Au, Ti/Al/Pt/Au or any combination thereof. 
     
     
         7 . The light emitting diode device as claimed in  claim 1 , further comprising an insulating protective layer covering a portion of the second semiconductor layer and a sidewall of the stacked epitaxial structure, and the material of the insulating protective layer is an insulating dielectric material, oxide, nitride, or silicon carbide. 
     
     
         8 . The light emitting diode device as claimed in  claim 1 , further comprising a plurality of electrodes on the second semiconductor layer.