US2012007148A1PendingUtilityA1

Solid-state image pickup device and method for manufacturing same

Assignee: YAMADA KIYOHIKOPriority: Nov 11, 2009Filed: Sep 23, 2011Published: Jan 12, 2012
Est. expiryNov 11, 2029(~3.3 yrs left)· nominal 20-yr term from priority
H04N 23/57H04N 25/41H04N 23/54H10F 77/407H10F 39/804
29
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Claims

Abstract

A solid-state image pickup device includes: a light-transmitting substrate including a terminal electrode for external connection, an inside electrode for bonding a solid-state image pickup element, and a trace that connects the terminal electrode to the corresponding inside electrode; and the solid-state image pickup element which is placed such that a light receiving area opposes the light-transmitting substrate and which is connected to the inside electrode. The trace is made of a light-transmitting conductive film at least in a region opposing the light receiving area of the solid-state image pickup element.

Claims

exact text as granted — not AI-modified
1 . A solid-state image pickup device comprising:
 a light-transmitting substrate including a terminal electrode for external connection, an inside electrode for bonding a solid-state image pickup element, and a trace that connects the terminal electrode to the corresponding inside electrode; and   the solid-state image pickup element which is placed such that a light receiving area opposes the light-transmitting substrate and which is connected to the inside electrode,   wherein the trace is made of a light-transmitting conductive film at least in a region opposing the light receiving area of the solid-state image pickup element.   
     
     
         2 . The solid-state image pickup device according to  claim 1 ,
 wherein a region of a gap between the solid-state image pickup element and the light-transmitting substrate except the light receiving area of the solid-state image pickup element is filled with a sealing resin.   
     
     
         3 . The solid-state image pickup device according to  claim 1 ,
 wherein the light receiving area of the solid-state image pickup element has a rectangular shape, and   wherein the trace obliquely runs across a corner portion of the rectangular shape.   
     
     
         4 . The solid-state image pickup device according to  claim 1 ,
 wherein the terminal electrode is arranged along a side of the light-transmitting substrate.   
     
     
         5 . The solid-state image pickup device according to  claim 4 ,
 wherein the inside electrode is arranged along opposing two sides of the solid-state image pickup element.   
     
     
         6 . The solid-state image pickup device according to  claim 1 ,
 wherein the light-transmitting substrate is a glass substrate.   
     
     
         7 . The solid-state image pickup device according to  claim 1 ,
 wherein at least an upper surface of the trace opposing the light receiving area of the solid-state image pickup element is made of a light-transmitting conductive film, and   wherein in a region other than the light receiving area, the trace is made of a metallic film.   
     
     
         8 . The solid-state image pickup device according to  claim 1 ,
 wherein the light-transmitting conductive film is made of an indium tin oxide layer.   
     
     
         9 . The solid-state image pickup device according to  claim 1 ,
 wherein a plurality of solid-state image pickup elements are placed on the light-transmitting substrate.   
     
     
         10 . The solid-state image pickup device according to  claim 9 ,
 wherein the plurality of solid-state image pickup elements are integrated on a single substrate, and   wherein in a region opposing the solid-state image pickup elements, the trace is provided so as to oppose a trace area that surrounds the light receiving areas of the respective solid-state image pickup elements.   
     
     
         11 . The solid-state image pickup device according to  claim 10 ,
 wherein each of the solid-state image pickup elements comprises:
 a photoelectric conversion unit comprising a photodiode; and 
 a charge transfer unit configured to transfer electric charges produced by the photoelectric conversion unit, and 
   wherein in the region opposing the solid-state image pickup elements, the trace is formed in a region opposing the charge transfer units.   
     
     
         12 . The solid-state image pickup device according to  claim 11 ,
 wherein the light-transmitting substrate comprises:
 an optical filter configured to permit transmission of light having a specific wavelength band; and 
 a light shielding film formed in a region corresponding to a boundary between a plurality of image pickup areas. 
   
     
     
         13 . A method for manufacturing the solid-state image pickup device according to  claim 1 , said method comprising:
 a step of positioning a projecting electrode formed at a connection terminal of the solid-state image pickup elements to the inside electrode of the light-transmitting substrate, and bonding the projecting electrode to the inside electrode by a conductive adhesive; and   a step of sealing the region of the solid-state image pickup element except the light receiving area thereof.   
     
     
         14 . The method for manufacturing the solid-state image pickup device according to  claim 13 ,
 wherein the light-transmitting substrate comprises:
 the glass substrate; 
 the optical filter which is formed on a surface of the glass substrate opposing an adhesive surface of the solid-state image pickup element and which is configured to permit transmission of light having the specific wavelength band; and 
 the light shielding film formed in the region corresponding to the boundary between the plurality of image pickup areas, and 
   wherein the sealing step comprises a step of sealing the region, except the light receiving area of the solid-state image pickup element, with a photo-curable resin that causes a curing reaction at the transmission wavelength band of the optical filter after the bonding step.

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