Wet etching solution

Abstract

A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.

1 . A wet etching solution, comprising:
 hydrogen fluoride in an amount of about 0.1% to about 3% based on a total weight of the wet etching solution;   an inorganic acid in an amount of about 10% to about 40% based on the total weight of the wet etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid;   a surfactant in an amount of about 0.0001% to about 5% based on the total weight of the wet etching solution, the surfactant including one or more of alkylphenol ethoxylate and/or ammonium lauryl sulfate; and   water,   wherein the wet etching solution exhibits a selectivity ratio of silicon oxide to metal silicide of about 1:0.5 to about 1:3.   
     
     
         2 . The wet etching solution as claimed in  claim 1 , wherein the nonionic surfactant is ammonium lauryl sulfate. 
     
     
         3 . (canceled) 
     
     
         4 . The wet etching solution as claimed in  claim 1 , wherein the selectivity ratio for silicon oxide to each of tungsten silicide, titanium silicide, molybdenum silicide, nickel silicide, tantalum silicide, and copper silicide, is about 1:0.5 to about 1:3. 
     
     
         5 . The wet etching solution as claimed in  claim 1 , wherein the selectivity ratio of boron phosphor silicate glass to metal silicide is about 1:0.5 to about 1:3. 
     
     
         6 .- 16 . (canceled) 
     
     
         17 . A method for selectively etching a silicon oxide layer using the wet etching solution according to  claim 1 . 
     
     
         18 .- 19 . (canceled) 
     
     
         20 . The wet etching solution as claimed in  claim 1 , wherein the surfactant is alkylphenol ethoxylate and excludes ammonium lauryl sulfate. 
     
     
         21 . The wet etching solution as claimed in  claim 20 , wherein the amount of the surfactant is about 0.0001% to less than 1% based on the total weight of the wet etching solution.