Canister for deposition apparatus and deposition apparatus using same

Abstract

A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.

1 . A canister for a deposition apparatus, comprising:
 a main body where a source material vaporizes;   a heating unit heating the main body; and   a temperature measuring unit disposed under the main body.   
     
     
         2 . The canister for the deposition apparatus of  claim 1 , wherein:
 the temperature measuring unit includes a temperature sensor.   
     
     
         3 . The canister for the deposition apparatus of  claim 1 , wherein:
 the source material is metal powder.   
     
     
         4 . The canister for a deposition apparatus of  claim 1 , further comprising:
 a source storage to supply the source material into the main body.   
     
     
         5 . The canister for the deposition apparatus of  claim 4 , further comprising:
 a first supply control unit that is disposed between the main body and the source storage and controls the source material supplied into the main body.   
     
     
         6 . The canister for the deposition apparatus of  claim 5 , wherein:
 the first supply control unit includes a first valve disposed in a first pipe connecting the main body with the source storage and a first control unit controlling the first valve to open/close.   
     
     
         7 . The canister for the deposition apparatus of  claim 1 , further comprising:
 a temperature controller that controls the heating unit on the basis of temperature measured by the temperature measuring unit.   
     
     
         8 . A deposition apparatus comprising:
 a deposition chamber;   a canister supplying a reaction gas into the deposition chamber; and   a carrier gas supplier to supply a carrier gas into the canister,   wherein the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.   
     
     
         9 . The deposition apparatus of  claim 8 , wherein:
 the temperature measuring unit includes a temperature sensor.   
     
     
         10 . The deposition apparatus of  claim 8 , wherein:
 the canister further includes a source storage for supplying a source material into the main body of the canister.   
     
     
         11 . The deposition apparatus of  claim 10 , wherein:
 the source material is metal powder.   
     
     
         12 . The deposition apparatus of  claim 10 , wherein:
 the canister further includes a first supply control unit disposed between the main body and the source storage and controlling the source material supplied into the main body.   
     
     
         13 . The deposition apparatus of  claim 12 , wherein:
 the first supply control unit includes a first valve disposed in a first pipe connecting the main body of the canister with the source storage and a first controller controlling the first valve to open/close.   
     
     
         14 . The deposition apparatus of  claim 8 , further comprising:
 a second supply control unit disposed between the carrier gas supplier and the main body of the canister, and a third supply control unit disposed between the main body of the canister and the deposition chamber.   
     
     
         15 . The deposition apparatus of  claim 14 , wherein:
 the second supply control unit includes a second valve disposed in a second pipe connecting the carrier gas supplier with the main body of the canister and a second controller controlling the second valve to open/close, and the third supply control unit includes a third valve disposed in a third pipe connecting the main body of the canister with the deposition chamber and a third controller controlling the third valve to open/close.   
     
     
         16 . The deposition apparatus of  claim 14 , wherein:
 the second supply control unit and the third supply control unit are positioned between the top of the main body and the carrier gas supplier or the deposition chamber.   
     
     
         17 . The deposition apparatus of  claim 14 , further comprising:
 a fourth pipe connecting the carrier gas supplier with the deposition chamber and disposed between the carrier gas supplier and the second supply control unit and between the deposition chamber and the third supply control unit, and a fourth supply control unit disposed in the fourth pipe.   
     
     
         18 . The deposition apparatus of  claim 17 , wherein:
 the fourth supply control unit includes a fourth valve disposed in the fourth pipe and a fourth controller controlling the fourth valve to open/close.   
     
     
         19 . The deposition apparatus of  claim 8 , wherein:
 the canister further includes a temperature controller controlling the heating unit on the basis of temperature measured by the temperature measuring unit.   
     
     
         20 . The deposition apparatus of  claim 8 , wherein:
 the deposition chamber is an atomic layer deposition (ALD) chamber for an atomic layer deposition process.