High Voltage Niobium Oxides And Capacitors Containing Same

Abstract

Nb 1-x Ta x O powder wherein x is 0.1 to 0.5 is described. Further, this powder, as well as niobium suboxide powders, can be doped with at least one dopant oxide. Pressed bodies of the powder, sintered bodies, capacitor anodes, and capacitors are also described.

1 . A powder comprising Nb 1-x Ta x O powder, wherein x is 0.1 to 0.5. 
     
     
         2 . The powder of  claim 1 , wherein said powder consists essentially of said Nb 1-x Ta x O powder. 
     
     
         3 . The powder of  claim 1 , wherein said powder is doped with an oxide of Y, Si, Mn, Al, Ce, V, or a combination thereof. 
     
     
         4 . The powder of  claim 1 , wherein said powder is doped with at least one dopant oxide. 
     
     
         5 . The powder of  claim 1 , wherein said powder is doped with Y 2 O 3 , SiO 2 , Mn 3 O 4 , Al 2 O 3 , Mn 2 O 3 , CeO 2 , V 2 O 3 , or a combination thereof. 
     
     
         6 . The powder of  claim 1 , wherein said powder is doped with at least one dopant having a cation valency of +2 or higher. 
     
     
         7 . The powder of  claim 6 , wherein said dopant has an ionic size that is within 10% of the ionic size of niobium. 
     
     
         8 . The powder of  claim 1 , wherein x is 0.2 to 0.4. 
     
     
         9 . The powder of  claim 1 , wherein x is 0.25 to 0.35. 
     
     
         10 . A capacitor anode comprising a sintered pressed body comprising the powder of  claim 1 . 
     
     
         11 . The capacitor anode of  claim 10 , wherein said capacitor anode has an anodization constant of from 1.5 nm/V to 3.5 nm/V. 
     
     
         12 . The capacitor anode of  claim 10 , wherein said capacitor anode has a dielectric layer and said capacitor anode has no field induced crystallization within said dielectric layer. 
     
     
         13 - 18 . (canceled) 
     
     
         19 . The powder of  claim 3 , wherein said oxide of Y, Si, Mn, Al, Ce, or V is present in an amount of 3% by weight or less. 
     
     
         20 . The powder of  claim 3 , wherein said oxide is present in an amount of from 0.25% by weight to 2.5% by weight. 
     
     
         21 . The capacitor anode of  claim 10 , wherein said capacitor anode further comprises a dielectric layer without any field-induced crystallization within said dielectric layer. 
     
     
         22 . (canceled) 
     
     
         23 . The capacitor anode of  claim 10 , wherein said capacitor anode is formed with a formation voltage of from 60 volts to 75 volts with a pressed density of 3.0 g/cc or higher, and sintered at a temperature of from 1000° C. to 1500° C. for 10 minutes or more at a formation temperature of 90° C. 
     
     
         24 - 26 . (canceled) 
     
     
         27 . The capacitor anode of  claim 21 , wherein said capacitor anode has a capacitance of from 60,000 CV/g to 75,000 CV/g.