Semiconductor Device

Abstract

A semiconductor device that can cope with larger numbers of pins and finer pitches while suppressing lowering of the manufacturing yield and reliability includes: a semiconductor chip having a plurality of electrodes provided on an upper surface thereof; a plurality of lead terminals including inner lead portions disposed toward the semiconductor chip; a sheet-form wiring member having a plurality of conductors insulated from one another on one main surface thereof; and a sealing-resin layer for sealing at least the semiconductor chip, the inner lead portions and the wiring member. The electrodes of the semiconductor device and the inner lead portions of the lead terminals are electrically connected respectively to each other via the conductors of the wiring member.

1 . A semiconductor device comprising:
 a semiconductor chip;   a die pad on which the semiconductor chip is mounted;   a plurality of lead terminals having a surface at a height different from a height of the die pad as measured in a thickness direction;   a plurality of wiring conductors electrically connecting the lead terminals to the semiconductor chip;   a flat sheet on which all the wiring conductors are formed; and   a plurality of bumps provided one for each of the semiconductor chip and the lead terminals, all the bumps being substantially at the same height as one another,   wherein an upper surface of each of the lead terminals is substantially at the same height as an upper surface of the semiconductor chip.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the wiring conductors are formed on a semiconductor chip-side surface of the sheet. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the wiring conductors are formed of a metal layer. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the bumps are stud bumps. 
     
     
         5 . The semiconductor device of  claim 1 , wherein a plated layer is formed on a surface of the bumps. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the sheet is formed of polyimide. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the semiconductor chip is fixed on an upper surface of the die pad with an adhesive layer in between. 
     
     
         8 . The semiconductor device of  claim 1 , further comprising a sealing resin layer sealing the semiconductor chip. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the die pad has four suspension leads. 
     
     
         10 . The semiconductor device of  claim 9 , wherein the suspension leads are disposed one at each of four corners of the die pad. 
     
     
         11 . The semiconductor device of  claim 1 , wherein the lead terminals are formed of a copper-based material, of which examples include phosphor bronze and oxygen-free copper. 
     
     
         12 . A semiconductor device comprising:
 a semiconductor chip;   a die pad on which the semiconductor chip is mounted;   a plurality of lead terminals having a surface at a height different from a height of the die pad in a thickness direction;   a plurality of wiring conductors electrically connecting the lead terminals to the semiconductor chip, the wiring conductors having no bent portion;   a flat sheet on which all the wiring conductors are formed; and   a plurality of bumps provided one for each of the semiconductor chip and the lead terminals, all the bumps being substantially at the same height as one another,   wherein an upper surface of each of the lead terminals is substantially at the same height as an upper surface of the semiconductor chip.   
     
     
         13 . The semiconductor device of  claim 12 , wherein the wiring conductors are formed on a semiconductor chip-side surface of the sheet. 
     
     
         14 . The semiconductor device of  claim 12 , wherein the bumps are stud bumps. 
     
     
         15 . The semiconductor device of  claim 12 , wherein the sheet is formed of polyimide. 
     
     
         16 . The semiconductor device of  claim 12 , wherein the semiconductor chip is fixed on an upper surface of the die pad with an adhesive layer in between. 
     
     
         17 . The semiconductor device of  claim 12 , wherein the lead terminals are formed of a copper-based material, of which examples include phosphor bronze and oxygen-free copper. 
     
     
         18 . A semiconductor device comprising:
 a semiconductor chip;   a die pad on which the semiconductor chip is mounted;   a plurality of lead terminals having a surface at a height different from a height of the die pad in a thickness direction;   a plurality of rectilinear wiring conductors electrically connecting the lead terminals to the semiconductor chip;   a flat sheet on which all the wiring conductors are formed; and   a plurality of bumps provided one for each of the semiconductor chip and the lead terminals, all the bumps being substantially at the same height as one another,   wherein an upper surface of each of the lead terminals is substantially at the same height as an upper surface of the semiconductor chip.   
     
     
         19 . The semiconductor device of  claim 18 , wherein the wiring conductors are formed on a semiconductor chip-side surface of the sheet. 
     
     
         20 . The semiconductor device of  claim 18 , wherein the bumps are stud bumps. 
     
     
         21 . The semiconductor device of  claim 18 , wherein the sheet is formed of polyimide. 
     
     
         22 . The semiconductor device of  claim 18 , wherein the semiconductor chip is fixed on an upper surface of the die pad with an adhesive layer in between. 
     
     
         23 . The semiconductor device of  claim 18 , wherein the lead terminals are formed of a copper-based material, of which examples include phosphor bronze and oxygen-free copper. 
     
     
         24 . A semiconductor device comprising:
 a semiconductor chip;   a die pad on which the semiconductor chip is mounted;   a plurality of lead terminals having a surface at a height different from a height of the die pad as measured in a thickness direction;   a plurality of wiring conductors electrically connecting the lead terminals to the semiconductor chip;   a sheet on which all the wiring conductors are formed, the sheet having no bent portion; and   a plurality of bumps provided one for each of the semiconductor chip and the lead terminals, all the bumps being substantially at the same height as one another,   wherein an upper surface of each of the lead terminals is substantially at the same height as an upper surface of the semiconductor chip.   
     
     
         25 . The semiconductor device of  claim 24 , wherein the wiring conductors are formed on a semiconductor chip-side surface of the sheet. 
     
     
         26 . The semiconductor device of  claim 24 , wherein the bumps are stud bumps. 
     
     
         27 . The semiconductor device of  claim 24 , wherein a plated layer is formed on a surface of the bumps. 
     
     
         28 . The semiconductor device of  claim 24 , wherein the sheet is formed of polyimide. 
     
     
         29 . The semiconductor device of  claim 24 , wherein the semiconductor chip is fixed on an upper surface of the die pad with an adhesive layer in between. 
     
     
         30 . The semiconductor device of  claim 24 , further comprising a sealing resin layer sealing the semiconductor chip. 
     
     
         31 . The semiconductor device of  claim 24 , wherein the die pad has four suspension leads. 
     
     
         32 . The semiconductor device of  claim 24 , wherein the lead terminals are formed of a copper-based material, of which examples include phosphor bronze and oxygen-free copper. 
     
     
         33 . A semiconductor device comprising:
 a semiconductor chip;   a die pad on which the semiconductor chip is mounted;   a plurality of lead terminals having a surface at a height different from a height of a surface of the die pad as measured in a thickness direction;   a plurality of rectilinear wiring conductors electrically connecting the lead terminals to the semiconductor chip;   a sheet on which all the wiring conductors are formed, the sheet having no bent portion; and   a plurality of bumps provided one for each of the semiconductor chip and the lead terminals, all the bumps being substantially at the same height as one another,   wherein an upper surface of each of the lead terminals is substantially at the same height as an upper surface of the semiconductor chip.   
     
     
         34 . The semiconductor device of  claim 33 , wherein the wiring conductors are formed on a semiconductor chip-side surface of the sheet. 
     
     
         35 . The semiconductor device of  claim 33 , wherein the bumps are stud bumps. 
     
     
         36 . The semiconductor device of  claim 33 , wherein the sheet is formed of polyimide. 
     
     
         37 . The semiconductor device of  claim 33 , wherein the semiconductor chip is fixed on an upper surface of the die pad with an adhesive layer in between. 
     
     
         38 . The semiconductor device of  claim 33 , wherein the lead terminals are formed of a copper-based material, of which examples include phosphor bronze and oxygen-free copper.