Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

Abstract

According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.

1 . A semiconductor light emitting device comprising:
 a light emitting section including a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface;   a light transmitting section provided on a side of the first major surface;   a wavelength conversion section provided over the light transmitting section;   a first conductive section provided on the first electrode section;   a second conductive section provided on the second electrode section; and   a sealing section provided on a side of the second major surface and sealing the first conductive section and the second conductive section while exposing an end portion of the first conductive section and an end portion of the second conductive section,   the wavelength conversion section being formed from a resin mixed with a phosphor, and hardness of the cured resin being set to exceed 10 in Shore D hardness.   
     
     
         2 . The device according to  claim 1 , wherein refractive index of the resin is equal to or less than refractive index of the phosphor. 
     
     
         3 . The device according to  claim 1 , wherein transmittance of the resin is 90% or more. 
     
     
         4 . The device according to  claim 1 , wherein the wavelength conversion section includes a shape such that optical path length in the wavelength conversion section is adjusted to suppress chromaticity shift in accordance with emission characteristic of the light emitting section. 
     
     
         5 . The device according to  claim 4 , wherein the light transmitting section forms the shape of the wavelength conversion section suppressing the chromaticity shift. 
     
     
         6 . The device according to  claim 4 , wherein the wavelength conversion section includes a convex shape having a curvature radius of 250 nm or more. 
     
     
         7 . The device according to  claim 4 , wherein the wavelength conversion section includes a concave shape having a curvature radius of 200 nm or more. 
     
     
         8 . The device according to  claim 1 , wherein the resin is at least one selected from the group consisting of epoxy resin, silicone resin, methacrylic resin (PMMA), polycarbonate (PC), cyclic polyolefin (COP), alicyclic acrylate (OZ), allyldiglycol carbonate (ADC), acrylic resin, fluororesin, a hybrid resin of silicone resin and epoxy resin, and urethane resin. 
     
     
         9 . The device according to  claim 1 , wherein the resin is at least one selected from the group consisting of methylphenyl silicone, dimethyl silicone, and a hybrid resin of methylphenyl silicone and epoxy resin. 
     
     
         10 . The device according to  claim 1 , wherein the phosphor has an emission wavelength of 380 nm or more and 720 nm or less, and includes at least one element selected from the group consisting of silicon (Si), aluminum (Al), titanium (Ti), germanium (Ge), phosphorus (P), boron (B), yttrium (Y), alkaline earth element, sulfide element, rare earth element, and nitride element. 
     
     
         11 . A method for manufacturing a semiconductor light emitting device, the device including:
 a light emitting section including a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface; and   a wavelength conversion section provided on a side of the first major surface and formed from a resin mixed with a phosphor,   the method comprising:   setting hardness of the cured resin to exceed 10 in Shore D hardness.   
     
     
         12 . The method according to  claim 11 , further comprising:
 integrally forming the semiconductor light emitting device in a plurality; and   singulating the plurality of integrally formed semiconductor light emitting devices,   in the singulating, the wavelength conversion section being cut using a blade dicing method.   
     
     
         13 . The method according to  claim 11 , wherein the hardness of the cured resin is controlled by adding an additive for increasing cross-linking sites of the resin. 
     
     
         14 . The method according to  claim 11 , wherein the resin is at least one selected from the group consisting of epoxy resin, silicone resin, methacrylic resin (PMMA), polycarbonate (PC), cyclic polyolefin (COP), alicyclic acrylate (OZ), allyldiglycol carbonate (ADC), acrylic resin, fluororesin, a hybrid resin of silicone resin and epoxy resin, and urethane resin. 
     
     
         15 . The method according to  claim 11 , wherein the resin is at least one selected from the group consisting of methylphenyl silicone, dimethyl silicone, and a hybrid resin of methylphenyl silicone and epoxy resin. 
     
     
         16 . The method according to  claim 11 , wherein the phosphor has an emission wavelength of 380 nm or more and 720 nm or less, and includes at least one element selected from the group consisting of silicon (Si), aluminum (Al), titanium (Ti), germanium (Ge), phosphorus (P), boron (B), yttrium (Y), alkaline earth element, sulfide element, rare earth element, and nitride element. 
     
     
         17 . The method according to  claim 11 , wherein in forming the wavelength conversion section, the wavelength conversion section is formed to include a shape such that optical path length in the wavelength conversion section is adjusted to suppress chromaticity shift in accordance with emission characteristic of the light emitting section. 
     
     
         18 . The method according to  claim 11 , further comprising:
 forming a light transmitting section on the side of the first major surface,   in forming the wavelength conversion section, the wavelength conversion section is formed over the light transmitting section.   
     
     
         19 . The method according to  claim 11 , wherein in forming the wavelength conversion section, a convex shape having a curvature radius of 250 nm or more is formed in the wavelength conversion section. 
     
     
         20 . The method according to  claim 11 , wherein in forming the wavelength conversion section, a concave shape having a curvature radius of 200 nm or more is formed in the wavelength conversion section.