Method of forming the structure of thermal resistive layer

Abstract

The prevent disclosure discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is possible.

1 . A method for forming a structure of thermal resistive layer on a plastic substrate comprising the steps of:
 forming a material layer on said plastic substrate;   transforming said material layer into a porous template layer with a specific thickness by anodizing; and   forming a buffer layer on said porous template layer.   
     
     
         2 . The method according to  claim 1 , wherein said buffer layer is substantially a silicon oxide. 
     
     
         3 . The method according to  claim 1 , further comprising forming a planarization layer between said buffer layer and said porous template layer. 
     
     
         4 . The method according to  claim 3 , wherein said planarization layer is a material selected from the group consisting of polymer, and inorganic material. 
     
     
         5 . The method according to  claim 1 , wherein said material layer is a material selected from the group consisting of silicon, titanium, zinc, and aluminum. 
     
     
         6 . The method according to  claim 1 , wherein said porous template layer further comprises a plurality of oxides of hollow structure which are material selected from the group consisting of silicon oxide, titanium oxide, zinc oxide, and aluminum oxide. 
     
     
         7 . The method according to  claim 6 , wherein the shape of said oxide of hollow structure is selected from the group consisting of sphere, column, and disk. 
     
     
         8 . The method according to  claim 1 , further comprising a conductive layer formed between said plastic substrate and said material layer. 
     
     
         9 . The method according to  claim 8 , wherein said conductive layer is substantially an indium tin oxide.