Wafer polishing apparatus

Abstract

Provided is a wafer polishing apparatus. The wafer polishing apparatus comprises a first polishing part and a second polishing part. The first part is disposed at a position higher than a top surface of a wafer and configured to be rotated on a first rotation axis. The second polishing part is disposed at a position lower than a bottom surface of the wafer and configured to be rotated on a second rotation axis.

1 . A wafer polishing apparatus comprising:
 a first polishing part disposed at a position higher than a top surface of a wafer and configured to be rotated on a first rotation axis; and   a second polishing part disposed at a position lower than a bottom surface of the wafer and configured to be rotated on a second rotation axis.   
     
     
         2 . The wafer polishing approximately according to  claim 1 , further comprising a third polishing part disposed at a lateral side of the wafer and configured to be rotated on a third rotation axis. 
     
     
         3 . The wafer polishing approximately according to  claim 2 , wherein the first polishing part, the second polishing part, and the third polishing part are brought into direct contact with an edge part of the wafer. 
     
     
         4 . The wafer polishing approximately according to  claim 3 , wherein the edge part comprises:
 a first chamfer extending from the top surface of the wafer;   a second chamfer extending from the bottom surface of the wafer; and   a top between the first and second chambers,   wherein the first polishing part is brought into direct contact with the first chamfer, the second polishing part is brought into direct contact with the second chamfer, and the third polishing part is brought into direct contact with the top.   
     
     
         5 . The wafer polishing approximately according to  claim 2 , wherein the first to third polishing parts are shaped like a roller, a disk, or a cylinder. 
     
     
         6 . The wafer polishing approximately according to  claim 2 , wherein the third rotation axis is between the top and bottom surfaces of the wafer. 
     
     
         7 . The wafer polishing approximately according to  claim 1 , further comprising a first gap adjustment unit configured to adjust a gap between the first polishing part and the wafer. 
     
     
         8 . The wafer polishing approximately according to  claim 1 , further comprising a second gap adjustment unit configured to adjust a gap between the second polishing part and the wafer. 
     
     
         9 . The wafer polishing approximately according to  claim 1 , wherein the wafer is rotated on a fourth rotation axis perpendicular to the top surface of the wafer;
 the first rotation axis extends in a direction crossing the fourth rotation axis; and   the second rotation axis extends in a direction crossing the fourth rotation axis.   
     
     
         10 . A wafer edge polishing apparatus comprising:
 a first polishing part making direct contact with an edge part of a wafer and configured to be rotated on a first rotation axis; and   a second polishing part making direct contact with the edge part of the wafer and configured to be rotated on a second rotation axis.   
     
     
         11 . The wafer edge polishing apparatus according to  claim 10 , further comprising a third polishing part making direct contact with the edge part of the wafer and configured to be rotated on a third rotation axis. 
     
     
         12 . The wafer edge polishing apparatus according to  claim 11 , wherein the first rotation axis is higher than a top surface of the wafer, the second rotation axis is lower than a bottom surface of the wafer, and the third rotation axis is between the top and bottom surfaces of the wafers. 
     
     
         13 . The wafer edge polishing apparatus according to  claim 10 , wherein the first rotation axis is parallel with a top surface of the wafer, and the second rotation axis is parallel with a bottom surface of the wafer. 
     
     
         14 . The wafer edge polishing apparatus according to  claim 10 , wherein the first polishing part is disposed at an upper lateral side of the wafer, and the second polishing part is disposed at a lower lateral side of the wafer. 
     
     
         15 . The wafer edge polishing apparatus according to  claim 11 , wherein the third polishing part is disposed at a lateral side of the wafer. 
     
     
         16 . The wafer edge polishing apparatus according to  claim 10 , wherein the first polishing part comprises:
 a first polishing head configured to be rotated on the first rotation axis; and   a first polishing pad disposed around the first polishing head.   
     
     
         17 . A wafer polishing part comprising:
 a first polishing part at a lateral side of a wafer;   a first driving shaft connected to the first polishing part; and   a first rotation driving part configured to rotate the first polishing part through the first driving shaft,   wherein an outer surface of the first polishing part is brought into direct contact with an edge part of the wafer.   
     
     
         18 . The wafer polishing apparatus according to  claim 17 , further comprising:
 a second polishing part at another lateral side of the wafer;   a second driving shaft connected to the second polishing part; and   a second rotation driving part configured to rotate the second polishing part through the second driving shaft,   wherein an outer surface of the second polishing part is brought into direct contact with the edge part of the wafer.   
     
     
         19 . The wafer polishing apparatus according to  claim 17 , further comprising a first gap adjustment unit configured to adjust a gap between the first polishing part and the edge part of the wafer by moving the first positive pressure and the first rotation driving part. 
     
     
         20 . The wafer polishing apparatus according to  claim 19 , further comprising a second gap adjustment unit configured to move the first positive pressure, the first rotation driving part, and the first gap adjustment unit.