Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

1 - 21 . (canceled) 
     
     
         22 . A semiconductor device, comprising:
 a first insulating film formed over a semiconductor substrate and having a first wiring trench;   a first metal formed in the first wiring trench;   a second insulating film formed over the first metal and over the first insulating film;   a third insulating film formed over the second insulating film;   a fourth insulating film formed over the third insulating film and having a thickness greater than thicknesses of the second and third insulating films;   a contact hole formed in the second, third and fourth insulating films; and   a second metal formed in the contact hole,   wherein the first metal and the second metal are composed of copper as a main component,   wherein the second insulating film is composed of a material including silicon, carbon and nitrogen,   wherein the third insulating film is composed of a material including silicon and carbon,   wherein the fourth insulating film is composed of a material including silicon, oxygen and carbon and has a dielectric constant lower than a dielectric constant of a silicon oxide film,   wherein a concentration of nitrogen in the second insulating film is higher than a concentration of nitrogen in the third insulating film, and   wherein an adhesion property of the third insulating film to the fourth insulating film is larger than an adhesion property of the second insulating film to the fourth insulating film.   
     
     
         23 . A semiconductor device according to  claim 22 ,
 wherein the first insulating film comprises a first film, a second film formed over the first film, and a third film formed over the second film.   
     
     
         24 . A semiconductor device according to  claim 23 ,
 wherein the first film is composed of a material including silicon, oxide and carbon,   wherein the second film is composed of a material including silicon and carbon, and   wherein the third film is composed of a material including silicon, oxide and nitrogen.   
     
     
         25 . A semiconductor device according to  claim 24 ,
 wherein an adhesion property of the second film to the third film is larger than an adhesion property of the first film to the third film.