Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus

Abstract

It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.

1 . A substrate processing apparatus comprising:
 a processing chamber configured to accommodate a substrate;   a source gas supply system configured to supply a plurality of source gases into the processing chamber;   an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the processing chamber;   a cleaning gas supply system configured to supply a cleaning gas into the processing chamber;   an exhaust system configured to exhaust the processing chamber; and   a control unit,   wherein the control unit is configured to control the source gas supply system, the oxygen-containing gas supply system, the cleaning gas supply system, and the exhaust system, so as to: form a nitride film on the substrate by supplying the plurality of source gases into the processing chamber; modify a nitride film adhered to the processing chamber into an oxide film by oxidizing the nitride film by supplying the oxygen-containing gas into the processing chamber; and remove the oxide film by supplying the cleaning gas into the processing chamber.   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein the cleaning gas is a halogen compound. 
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the plurality of source gases comprise at least one of a halogen or organic compound and a nitrogen-containing gas.