Adhesive bonding sheet, semiconductor device using same, and method for manufacturing such semiconductor device

Abstract

An adhesive bonding sheet having an optically transmitting supporting substrate and an adhesive bonding layer, and being used in both a dicing step and a semiconductor element adhesion step, wherein the adhesive bonding layer comprises: a polymer component (A) having a weight average molecular weight of 100,000 or more including functional groups; an epoxy resin (B); a phenolic epoxy resin curing agent (C); a photoreactive monomer (D), wherein the Tg of the cured material obtained by ultraviolet light irradiation is 250° C. or more; and a photoinitiator (E) which generates a base and a radical by irradiation with ultraviolet light of wavelength 200-450 nm.

1 . A method of manufacturing a semiconductor device, comprising steps of:
 (1) affixing an adhesive bonding sheet having an optically transmitting supporting substrate and an adhesive bonding layer to a semiconductor wafer via said adhesive bonding layer,
 wherein the adhesive bonding layer comprises (a) a polymer component having a weight average molecular weight of 100,000 or more including functional groups, (b) an epoxy resin, (c) an epoxy resin curing agent, (d) a photoreactive monomer and (e) a photoinitiator, 
 wherein the photoreactive monomer is dipentaerythritol hexacrylate or ethoxylated isocyanuric acid triacrylate, and 
 wherein usage amount of the photoreactive monomer is 10-70 weight parts relative to 100 weight parts of the polymer component; 
   (2) forming a chip with said adhesive bonding layer by dicing said semiconductor wafer;   (3) forming a semiconductor element with a curing adhesive bonding layer by irradiating said adhesive bonding layer, of the chip with said adhesive bonding layer, with ultraviolet light, and peeling said supporting substrate away from said semiconductor element with the curing adhesive bonding layer; and   (4) adhering said semiconductor element with the adhesive bonding layer, after peeling said supporting substrate, to a supporting member for mounting the semiconductor element via said adhesive bonding layer.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the polymer component is a (meth)acrylic copolymer comprising 0.5-6 weight % of epoxy group-containing repeating units based on the total weight of the polymer component. 
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 1 , wherein usage amount of the epoxy resin is 5-250 weight parts relative to 100 weight parts of the polymer component. 
     
     
         4 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a surface free energy of the supporting substrate is 50mN/m or less. 
     
     
         5 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a 90° peel adhesion strength, after ultraviolet irradiation, of the adhesive bonding layer relative to the supporting substrate is 10 N/m or less.