US2011277318A1PendingUtilityA1

Circuit device and manufacturing method therefor

Assignee: USUI RYOSUKEPriority: May 31, 2007Filed: Aug 1, 2011Published: Nov 17, 2011
Est. expiryMay 31, 2027(~0.8 yrs left)· nominal 20-yr term from priority
H10W 74/00H10W 72/5522H10W 72/59H10W 72/5363H10W 72/536H10W 90/754H10W 72/90H10W 72/9415H10W 72/942H10W 72/923H10W 90/724H10W 72/251H10W 90/701H10W 70/635H10W 70/685H05K 3/427Y10T29/49002Y10T29/49117H05K 2201/0352H05K 1/113H05K 2201/099H05K 2203/124H05K 3/282H05K 3/243H05K 3/28
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Claims

Abstract

A circuit device is made smaller in higher. The circuit device includes a wiring substrate, a first circuit element, and a second circuit element. The circuit substrate includes an insulating resin layer, a wiring layer provided on a main surface of the insulating resin layer, and a wiring layer provided on the other main surface of the insulating resin layer. The wiring layer includes first interconnectors to which the first circuit element connects, and wiring portions. The film thickness of the first interconnector is made thinner than that of the wiring portion. The wiring layer includes second interconnectors and wiring portions. The first interconnectors and the second interconnectors are connected through the medium of conductors.

Claims

exact text as granted — not AI-modified
1 - 6 . (canceled) 
     
     
         7 . A method for manufacturing a circuit device, the method comprising:
 forming a first wiring layer which includes a first interconnector on one face of a substrate;   forming a second wiring layer which includes a second interconnector electrically connected to the first interconnector, the second interconnector being provided on the other face of the substrate;   covering the second interconnector with a metal whose ionization tendency is smaller than that of a metal forming the first interconnector;   forming a pre-flux film on a surface of the first interconnector by subjecting the first interconnector to an organic solderability preservative processing; and   mounting a circuit element on the first interconnector.   
     
     
         8 . A method for manufacturing a circuit device according to  claim 7 , wherein a metal forming the first interconnector is copper and a metal covering the second interconnector is gold. 
     
     
         9 . A method for manufacturing a circuit device according to  claim 7 , wherein said mounting a circuit element is such that the circuit element is connected to the first interconnector using a solder bump. 
     
     
         10 . A method for manufacturing a circuit device according to  claim 8 , wherein said mounting a circuit element is such that the circuit element is connected to the first interconnector using a solder bump.

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