US2011273598A1PendingUtilityA1

Solid-state image sensor and camera

Assignee: CANON KKPriority: May 10, 2010Filed: Apr 20, 2011Published: Nov 10, 2011
Est. expiryMay 10, 2030(~3.8 yrs left)· nominal 20-yr term from priority
H04N 25/77H04N 25/767H04N 25/709H04N 25/625H04N 25/70H04N 25/134H04N 25/78H04N 25/7795H04N 25/628H04N 25/00
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Claims

Abstract

A solid-state image sensor comprises a pixel array in which a plurality of pixels are two-dimensionally arranged, and a plurality of column signal processing circuits which read out signals from the pixel array via a plurality of column signal lines arranged in correspondence with respective columns of the pixel array, wherein signals of the pixels of different colors in the pixel array are read out by the plurality of column signal processing circuits during a single period, and wherein at least the column signal processing circuits which process signals of the pixels of different colors, of the plurality of column signal processing circuits, are driven via conductive lines which are separated from each other in a region where at least the column signal processing circuits which process signals of the pixels of different colors are arranged.

Claims

exact text as granted — not AI-modified
1 . A solid-state image sensor comprising a pixel array in which a plurality of pixels are two-dimensionally arranged, and a plurality of column signal processing circuits which read out signals from the pixel array via a plurality of column signal lines arranged in correspondence with respective columns of the pixel array,
 wherein signals of the pixels of different colors in the pixel array are read out by the plurality of column signal processing circuits during a single period, and   wherein at least the column signal processing circuits which process signals of the pixels of different colors, of the plurality of column signal processing circuits, are driven via conductive lines which are separated from each other in a region where at least the column signal processing circuits which process signals of the pixels of different colors are arranged.   
     
     
         2 . The sensor according to  claim 1 , wherein power supply voltages are supplied via the conductive lines which are separated from each other. 
     
     
         3 . The sensor according to  claim 1 , wherein control signals having the same logic level are supplied via the conductive lines which are separated from each other. 
     
     
         4 . The sensor according to  claim 1 , wherein the conductive lines which are separated from each other are connected to a pad, which is driven by an external apparatus of the solid-state image sensor, via an interface circuit or directly. 
     
     
         5 . The sensor according to  claim 1 , wherein one conductive line is branched into the conductive lines which are separated from each other outside the region where at least the column signal processing circuits which process signals of the pixels of different colors are arranged. 
     
     
         6 . The sensor according to  claim 5 , wherein the one conductive line is connected to a pad, which is driven by an external apparatus of the solid-state image sensor, via an interface circuit or directly. 
     
     
         7 . The sensor according to  claim 1 , wherein the plurality of column signal processing circuits include a first column signal processing circuit which is arranged in a first P-well of an N-type semiconductor substrate, and a second column signal processing circuit which is arranged in a second P-well of the N-type semiconductor substrate, the first P-well and the second P-well are separated from each other, and the first column signal processing circuit and the second column signal processing circuit process signals of the pixels of different colors. 
     
     
         8 . The sensor according to  claim 1 , wherein the plurality of column signal processing circuits include a first column signal processing circuit which is arranged in a first P-well of an N-type semiconductor substrate, and a second column signal processing circuit which is arranged in a second P-well of the N-type semiconductor substrate, the first P-well and the second P-well are separated from each other, an N-well is arranged in the first P-well, an N-well is arranged in the second P-Well, and the first column signal processing circuit and the second column signal processing circuit process signals of the pixels of different colors. 
     
     
         9 . A camera comprising:
 a solid-state image sensor according to  claim 1 , and   a processing section which processes signals output from the solid-state image sensor.

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