Film-forming treatment jig, plasma cvd apparatus, metal plate and osmium film forming method

Abstract

To provide a film-forming treatment jig for forming a thin film on a plate having a through hole of a micro diameter by a single plasma film-forming treatment. The film-forming treatment jig according to the present invention includes: a holding member 39 for holding the aperture plate in a state of exposing the through hole and the front and back surfaces of the aperture plate by clamping an aperture plate 107 having a through hole; and an electrode member having the holding member attached thereon, wherein the electrode member is electrically connected to an electrode to which the plasma electric power of a plasma CVD apparatus is applied.

1 . A film-forming treatment jig comprising:
 a holding member for holding a plate, by clamping said plate having a through hole, in a state of exposing said through hole and the front and back surfaces of said plate; and   an electrode member having said holding member attached thereon, wherein   said electrode member is electrically connected to an electrode to which plasma electric power of a plasma CVD apparatus is applied.   
     
     
         2 . The film-forming treatment jig according to  claim 1  wherein
 said electrode member has a flange to be placed on a transfer arm. 
 
     
     
         3 . A plasma CVD apparatus comprising:
 a chamber,   a first electrode disposed in said chamber,   a second electrode disposed in said chamber, and disposed so as to face said first electrode,   a power source electrically connected to at least one of said first electrode and said second electrode, for applying plasma electric power,   a raw material gas introduction mechanism for introducing a raw material gas into said chamber, and   a film-forming treatment jig including: a holding member for holding a plate, by clamping said plate having a through hole, in a state of exposing said through hole and the front and back surfaces of said plate; and an electrode member having said holding member attached thereon, wherein   said electrode member functions as a part of said second electrode when a thin film is formed on the front and back surfaces of said plate held by said holding member and the inside surface of said through hole by a plasma CVD method, by electrically connecting said electrode member onto said second electrode and placing said plate held by said holding member between said first electrode and said second electrode.   
     
     
         4 . The plasma CVD apparatus according to  claim 3 , wherein
 said electrode member has a flange, and   said apparatus comprises a transfer mechanism for transferring said film-forming treatment jig into said chamber by placing said flange on a transfer arm.   
     
     
         5 . The plasma CVD apparatus according to  claim 3  further comprising
 a plasma wall that is arranged in said chamber and is arranged around said plate placed between said first electrode and said second electrode, wherein 
 said plasma wall is connected to a float potential. 
 
     
     
         6 . The plasma CVD apparatus according to  claim 3 , wherein
 said raw material gas is introduced by said raw material gas introduction mechanism in a direction approximately parallel to the surface of said plate placed between said first electrode and said second electrode.   
     
     
         7 . A plasma CVD apparatus comprising:
 a chamber;   an upper electrode disposed in said chamber;   a lower electrode disposed in said chamber, and disposed so as to face said upper electrode, on the lower side;   a power source electrically connected to at least one of said upper electrode and said lower electrode to apply plasma electric power;   a raw material gas introduction mechanism for introducing a raw material gas into said chamber, and for causing said raw material gas to flow from said upper electrode side toward said lower electrode side;   a film-forming treatment jig including: a holding member for holding a plate, by clamping said plate having a through hole, in a state of exposing said through hole and the front and back surfaces of said plate; an electrode member having said holding member attached thereon; and a flange provided to said electrode member;   a transfer mechanism for transferring said film-forming treatment jig into said chamber by placing said flange on a transfer arm, wherein   said electrode member functions as a part of said second electrode when a thin film is formed on the front and back surfaces of said plate held by said holding member and the inside surface of said through hole by a plasma CVD method, by electrically connecting said electrode member onto said lower electrode, and placing said plate held by said holding member between said upper electrode and said lower electrode and placing said plate so that the surface thereof becomes approximately parallel to the direction vertical to the upper surface of said lower electrode.   
     
     
         8 . The plasma CVD apparatus according to  claim 7 , wherein
 said plate is an aperture plate, said through hole has a diameter of 100 μm or less, and said thin film is an osmium film.   
     
     
         9 . The plasma CVD apparatus according to  claim 1 , wherein
 said plasma electric power is radio frequency power.   
     
     
         10 . A metal plate including a plate having a through hole with a diameter of 100 μm or less, and an osmium film formed by a single film-forming treatment by a plasma CVD apparatus, on the inside surface of said through hole and on the front and back surfaces located near said through hole of said plate, wherein
 said plasma CVD apparatus comprises: 
 a chamber, 
 an upper electrode disposed in said chamber; 
 a lower electrode disposed in said chamber, and disposed so as to face said upper electrode, on the lower side; 
 a power source electrically connected to at least one of said upper electrode and said lower electrode to apply plasma electric power; 
 a holding member electrically connected to said lower electrode, for holding said plate in a state of exposing said through hole and the front and back surfaces of said plate by clamping said plate to place said plate between said upper electrode and said lower electrode; 
 a plasma wall arranged in said chamber, placed around said plate, and connected to a float potential; and 
 a raw material gas introduction mechanism for introducing a raw material gas into said chamber, for causing said raw material gas to flow from said upper electrode side toward said lower electrode side, and for causing said raw material gas to flow in a direction along the front and back surfaces of said plate. 
 
     
     
         11 . The metal plate according to  claim 10  wherein
 said osmium film has a thickness of 10 nm or more. 
 
     
     
         12 . The metal plate according to  claim 10  wherein
 said plasma electric power is radio frequency power. 
 
     
     
         13 . The metal plate according to  claim 10  wherein
 said metal plate is an aperture plate. 
 
     
     
         14 . A film-forming method of an osmium film comprising the steps of:
 disposing a metal member in a chamber;   introducing OSO 4  gas at a flow rate of 0.1 to 3 cc/min and an inert gas for maintaining discharge into said chamber while maintaining the pressure in said chamber to 13 to 40 Pa; and   forming an osmium film on the surface of said metal member by turning the gas in said chamber into plasma using radio frequency output power with the density of 0.25 to 2.0 W/cm 2 .   
     
     
         15 . The plasma CVD apparatus according to  claim 3 , wherein
 said plasma electric power is radio frequency power.   
     
     
         16 . The plasma CVD apparatus according to  claim 7 , wherein
 said plasma electric power is radio frequency power.