Manufacturing method for semiconductor device containing stacked semiconductor chips

Abstract

An adhesive film is formed on an electrode film, and a coating film is formed thereon. Nickel, chrome, molybdenum, tungsten, aluminum or an alloy of them is used as a constituent material of the adhesive film. Gold, silver, platinum or an alloy of them is used as a constituent material of the coating film.

1 - 11 . (canceled) 
     
     
         12 . A manufacturing method of a semiconductor device comprising:
 providing a base material including a conductor circuit;   forming a dielectric film and a pad electrode, the dielectric film covering at least a part of the base material, the pad electrode being connected with the conductor circuit and being located on a surface of the base material or a surface of the dielectric film; and   performing plasma treatment on exposed surfaces of the dielectric film and the pad electrode, wherein the pad electrode comprises an electrode film on the dielectric film and a plasma-resistant protective film covering the electrode film.   
     
     
         13 . The manufacturing method of  claim 12 , wherein forming the pad electrode includes forming an adhesive film covering the electrode film and forming a plasma-resistant protective film covering the adhesive film. 
     
     
         14 . The manufacturing method of  claim 12 , wherein performing plasma treatment forms a cluster of micro projections on the exposed surfaces of the dielectric film. 
     
     
         15 . The manufacturing method of  claim 12 , wherein performing plasma treatment forms a cluster of micro projections on the exposed surfaces of the pad electrode. 
     
     
         16 . The manufacturing method of  claim 12 , wherein forming the dielectric film and the pad electrode comprises:
 forming the dielectric film on a surface of the pad electrode and the base material; and   forming an opening in the dielectric film at a location of the pad electrode.