Semiconductor Device

Abstract

Disclosed herein are a semiconductor device and a method for manufacturing the same. The method includes forming a gate structure using a carbon nano tube (CNT). In order to prevent reduction of the gate resistance and the short channel effect, a CNT gate having a grown CNT pattern with a half-cylinder shape is formed over a recess of a semiconductor substrate. The CNT gate has the same effect as a recess gate, and can prevent the short channel effect, improve the speed, and the lower power characteristic of semiconductor devices.

1 . A semiconductor device comprising:
 an insulating film formed over a semiconductor substrate; and   a carbon nano tube gate obtained by growing a carbon nano tube seed layer over the insulating film.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the carbon nano tube gate is formed over a recess obtained by etching the semiconductor substrate. 
     
     
         3 . The semiconductor device according to  claim 1 , further comprising an insulating material for insulating the carbon nano tube gate.