Insulation structure for high temperature conditions and manufacturing method thereof

Abstract

An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.

1 . An insulation structure for high temperature conditions comprising:
 a substrate having a conductive pattern formed on at least one surface thereof for electrical connection of a device; and   a metal oxide layer pattern formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern comprising one selected from a group consisting of Al, Ti and Mg.   
     
     
         2 . The insulation structure according to  claim 1 , wherein the device comprises a power chip or a light emitting diode. 
     
     
         3 . The insulation structure according to  claim 1 , further comprising an upper substrate provided on the metal oxide layer pattern. 
     
     
         4 . The insulation structure according to  claim 3 , wherein the upper substrate and the metal oxide pattern are bonded together by Au/Sn eutectic bonding. 
     
     
         5 . The insulation structure according to  claim 3 , wherein the device comprises a light emitting diode, and the upper substrate comprises a reflecting plate. 
     
     
         6 . The insulation structure according to  claim 1 , wherein the substrate is a Si substrate. 
     
     
         7 - 11 . (canceled)