US2011259458A1PendingUtilityA1
Micro-machined temperature dependent one-shot valve and process for production thereof
Est. expiryNov 10, 2026(~0.3 yrs left)· nominal 20-yr term from priority
Inventors:Alexis Debray
Y10T29/49405F16K 2099/0074Y10T137/1812F16K 99/0036F16K 99/003Y10T137/2224F16K 99/0032F16K 2099/008F16K 99/0001F16K 2099/0084F16K 2099/0086
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Claims
Abstract
A micro-machined temperature dependent one-shot valve is provided which has an operation temperature adjustable readily, causing no leakage below the operation temperature even at a high pressure difference, being useful both in a liquid environment and in a gas environment, and being miniaturizable. The micro-machined temperature dependent one-shot valve comprises a silicon substrate 100 , a channel 101 penetrating the entire thickness of the silicon substrate, and a low melting point metal member 101 deposited on one face of the silicon substrate to obstruct the channel.
Claims
exact text as granted — not AI-modified1 . A valve, comprising:
a planar crystal substrate; a channel penetrating an entire thickness of the planar crystal substrate; and a low melting point metal member deposited on one face of the planar crystal substrate to obstruct the channel.
2 . The valve according to claim 1 , wherein a metal layer is provided between the low melting point metal member and the planar crystal substrate so as to obstruct the channel.
3 - 5 . (canceled)
6 . The valve according to claim 1 , wherein the low melting point metal member is formed from an alloy containing at least one element selected from a group that includes: Bi, Sn, Pb, In, and Cd.
7 . The valve according to claim 1 , wherein a part of the low melting point metal member is allowed to intrude into the channel.
8 . The valve according to claim 2 , wherein the metal layer formed from copper is covered by a photoresist layer, and a part of the low melting point metal member is allowed to intrude into the photoresist layer and is deposited on the metal layer formed from copper.
9 . The valve according to claim 1 , wherein a trench is formed on a portion of the planar crystal substrate onto which the low melting point metal member is deposited.
10 . (canceled)
11 . The valve according to claim 1 , wherein a heater component is placed between the low melting point metal member and the planar crystal substrate.
12 . A process for producing a valve comprised of a channel perforated through an entire thickness of a planar crystal substrate, and a low melting point metal member deposited on one face of the planar crystal substrate to obstruct the channel, the process comprising steps of:
forming a channel through an entire thickness of a planar crystal substrate; and depositing a low melting point metal member on a face of the planar crystal substrate to obstruct the channel.
13 . The process for producing a valve according to claim 12 , wherein the step of forming the channel is conducted by reactive ion etching.
14 . The process for producing a valve according to claim 12 , wherein the step of forming the channel is conducted by wet etching.
15 . The process for producing a valve according to claim 12 , wherein the step of depositing the low melting point metal member is conducted by immersing the planar crystal substrate in a two-phase liquid bath that includes a low-melting metal as one of the two liquid phases.
16 . The process for producing a valve according to claim 12 , further comprising steps of:
forming a metal layer on one face of the planar crystal substrate; patterning the metal layer; forming the channel perforated through the entire thickness of the planar crystal substrate at a position where the metal layer has been patterned; and depositing the low melting point metal member on the metal layer to obstruct the channel.
17 . The process for producing a valve according to claim 12 , wherein the depositing the low melting point metal member includes forcing a part of the low melting point metal member to intrude into the channel by heating the planar crystal substrate up to a temperature higher than the melting temperature of the low-melting metal and applying a pressure difference between both ends of the channel.
18 . The process for producing a valve according to claim 12 , further comprising steps of:
forming a trench on one face of the planar crystal substrate; forming the channel to be adjacent to the trench perforated through the entire thickness of the planar crystal substrate; and depositing the low melting point metal member to cover the trench on the planar crystal substrate and to obstruct the channel.
19 . The process for producing a valve according to claim 12 , further comprising steps of:
forming a metal layer on one face of the planar crystal substrate; patterning the metal layer for formation of the low melting point metal member and for formation of a heater component simultaneously; forming the channel perforated through the entire thickness of the planar crystal substrate at a position where the metal layer has been patterned for the depositing of the low melting point metal member; and depositing the low melting point metal member on the patterned metal layer to obstruct the channel.Join the waitlist — get patent alerts
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