Field effect transistor using oxide film for channel and method of manufacturing the same

Abstract

The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.

1 - 7 . (canceled) 
     
     
         8 . A method of manufacturing a field effect transistor including an oxide film as a semiconductor layer, comprising the steps of:
 forming the oxide film on a substrate; and   adding one of hydrogen and deuterium to a portion of the oxide film to form a source part and a drain part.   
     
     
         9 . A method of manufacturing a field effect transistor including an oxide film as a semiconductor layer, comprising the steps of:
 forming the oxide film on a substrate;   forming a gate insulating film on the oxide film;   forming a gate electrode on the gate insulating film; and
 adding one of hydrogen and deuterium to the oxide film with using a pattern of the gate electrode as a mask to form a source part and a drain part in the oxide film in self-alignment with the pattern of the gate electrode. 
   
     
     
         10 . (canceled)