Semiconductor Device and the Fabricating Method Thereof

Abstract

The object is to pattern extremely fine integrated circuits by forming fine contact holes. The dry etching method is employed to form contact holes to pattern a wiring ( 114 ), using a mask made of metallic film ( 112 ) and an organic material as an inter-layer insulating film ( 111 ) for covering switching elements and each of the wirings.

1 - 27 . (canceled) 
     
     
         28 . A semiconductor device comprising:
 a thin film transistor formed over a substrate;   an insulating film formed over the thin film transistor;   a conductive layer formed over the insulating film; and   a connection wiring formed on and in contact with the conductive layer,   wherein the connection wiring is electrically connected to an active region of the thin film transistor through a contact hole formed in the conductive layer and the insulating film.   
     
     
         29 . The semiconductor device according to  claim 28 ,
 wherein the connection wiring is directly connected to the active region.   
     
     
         30 . The semiconductor device according to  claim 28 ,
 wherein the conductive layer is not in contact with the active region of the thin film transistor.   
     
     
         31 . The semiconductor device according to  claim 28 ,
 wherein the connection wiring is at least one of a source electrode and a drain electrode.   
     
     
         32 . The semiconductor device according to  claim 28 ,
 wherein an edge of the conductive layer and an edge of the connection wiring are aligned.   
     
     
         33 . The semiconductor device according to  claim 28 ,
 wherein the semiconductor device is a liquid crystal display device which is incorporated into an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation system, a car stereo, a personal computer and a mobile information terminal.   
     
     
         34 . The semiconductor device according to  claim 28 ,
 wherein the semiconductor device is a light-emitting device which is incorporated into an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation system, a car stereo, a personal computer and a mobile information terminal.   
     
     
         35 . A semiconductor device comprising:
 a thin film transistor formed over a substrate;   a first insulating film formed over the thin film transistor;   a conductive layer formed over the first insulating film;   a first connection wiring formed on and in contact with the conductive layer;   a second insulating film formed over the first connection wiring; and   a second connection wiring formed over the second insulating film,   wherein the first connection wiring is electrically connected to an active region of the thin film transistor through a first contact hole formed in the conductive layer and the first insulating film, and   wherein the second connection wiring is electrically connected to the first connection wiring through a second contact hole formed in the second insulating film.   
     
     
         36 . The semiconductor device according to  claim 35 ,
 wherein the first connection wiring is directly connected to the active region.   
     
     
         37 . The semiconductor device according to  claim 35 ,
 wherein the conductive layer is not in contact with the active region of the thin film transistor.   
     
     
         38 . The semiconductor device according to  claim 35 ,
 wherein the first connection wiring is at least one of a source electrode and a drain electrode.   
     
     
         39 . The semiconductor device according to  claim 35 ,
 wherein an edge of the conductive layer and an edge of the first connection wiring are aligned.   
     
     
         40 . The semiconductor device according to  claim 35 ,
 wherein the semiconductor device is a liquid crystal display device which is incorporated into an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation system, a car stereo, a personal computer and a mobile information terminal.   
     
     
         41 . The semiconductor device according to  claim 35 ,
 wherein the semiconductor device is a light-emitting device which is incorporated into an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation system, a car stereo, a personal computer and a mobile information terminal.   
     
     
         42 . A semiconductor device comprising:
 a thin film transistor formed over a substrate;   an insulating film formed over the thin film transistor;   a first conductive layer and a second conductive layer formed over the insulating film; and   a first connection wiring formed on and in contact with the first conductive layer and a second connection wiring formed on and in contact with the second conductive layer,   wherein the first connection wiring is electrically connected to an active region of the thin film transistor through a first contact hole formed in the first conductive layer and the insulating film, and the second connection wiring is electrically connected to the active region of the thin film transistor through a second contact hole formed in the second conductive layer and the insulating film.   
     
     
         43 . The semiconductor device according to  claim 42 ,
 wherein each of the first connection wiring and the second connection wiring is directly connected to the active region.   
     
     
         44 . The semiconductor device according to  claim 42 ,
 wherein each of the first conductive layer and the second conductive layer is not in contact with the active region of the thin film transistor.   
     
     
         45 . The semiconductor device according to  claim 42 ,
 wherein the first connection wiring and the second connection wiring are a source electrode and a drain electrode.   
     
     
         46 . The semiconductor device according to  claim 42 ,
 wherein an edge of the first conductive layer and an edge of the first connection wiring are aligned, and an edge of the second conductive layer and an edge of the second connection wiring are aligned.   
     
     
         47 . The semiconductor device according to  claim 42 ,
 wherein the semiconductor device is a liquid crystal display device which is incorporated into an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation system, a car stereo, a personal computer and a mobile information terminal.   
     
     
         48 . The semiconductor device according to  claim 42 ,
 wherein the semiconductor device is a light-emitting device which is incorporated into an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head-mounted display, a car navigation system, a car stereo, a personal computer and a mobile information terminal.