Multilayer three-dimensional circuit structure

Abstract

A multilayer three-dimensional circuit structure and a manufacturing method thereof are provided in the present invention. The manufacturing method includes following steps. First, a three-dimensional insulating structure is provided. A first three-dimensional circuit structure is then formed on a surface of the three-dimensional insulating structure. Next, an insulating layer covering the first three-dimensional circuit structure is formed. Thereafter, a second three-dimensional circuit structure is formed on the insulating layer. Subsequently, at least a conductive via penetrating the insulating layer is formed for electrically connecting the second three-dimensional circuit structure and the first three-dimensional circuit structure.

1 . A multilayer three-dimensional circuit structure, comprising:
 a three-dimensional insulating structure, comprising at least a first three-dimensional surface;   a first three-dimensional circuit structure, disposed on the first three-dimensional surface;   an insulating layer, disposed on the three-dimensional insulating structure and covering the first three-dimensional circuit structure;   a second three-dimensional circuit structure, disposed on the insulating layer; and   at least a conductive via penetrating the insulating layer and electrically connecting the first three-dimensional circuit structure and the second three-dimensional circuit structure.   
     
     
         2 . The multilayer three-dimensional circuit structure as claimed in  claim 1 , wherein the three-dimensional insulating structure is an injection molding structure or an inkjet rapid prototyping structure. 
     
     
         3 . The multilayer three-dimensional circuit structure as claimed in  claim 1 , wherein the insulating layer has an injection molding structure, an inkjet rapid prototyping structure, a coating structure, a two-shot molding structure, or an insert molding structure. 
     
     
         4 . The multilayer three-dimensional circuit structure as claimed in  claim 3 , wherein the insulating layer has the injection molding structure, and the multilayer three-dimensional circuit structure further comprises:
 an adhesion layer, interposed between the insulating layer and the three-dimensional insulating structure.   
     
     
         5 . The multilayer three-dimensional circuit structure as claimed in  claim 1 , wherein a material of the three-dimensional insulating structure and the insulating layer is an elastic material comprising engineering plastic, ceramics, or glass. 
     
     
         6 . The multilayer three-dimensional circuit structure as claimed in  claim 5 , wherein a material of the engineering plastic is selected from a group consisting of epoxy resin, modified epoxy resin, polyester, acrylate, fluoro-polymer, polyphenylene oxide, polyimide, phenolicresin, polysulfone, silicone polymer, bismaleimide triazine modified epoxy, cyanate ester, polyethylene, polycarbonate, acrylonitrile-butadiene-styrene copolymer, polyethylene terephthalate, polybutylene terephthalate, liquid crystal polymer, polyamide 6, nylon, polyoxymethylene, polyphenylene sulfide, and cyclic olefin copolymer. 
     
     
         7 . The multilayer three-dimensional circuit structure as claimed in  claim 6 , wherein the elastic material further comprises an insulating material having a plurality of catalyst particles. 
     
     
         8 . The multilayer three-dimensional circuit structure as claimed in  claim 7 , wherein the plurality of catalyst particles is selected from a group consisting of metallic oxide particles, metallic nitride particles, metallic complex particles, metallic chelate particles, and metallic coordination compound particles. 
     
     
         9 . The multilayer three-dimensional circuit structure as claimed in  claim 7 , wherein a material of the plurality of catalyst particles is selected from a group consisting of manganese, chromium, palladium, copper, aluminum, zinc, silver, gold, nickel, cobalt, rhodium, iridium, iron, molybdenum, wolfram, vanadium, tantalum, titanium, indium, and platinum. 
     
     
         10 . The multilayer three-dimensional circuit structure as claimed in  claim 1 , wherein the three-dimensional insulating structure has the first three-dimensional surface inside a cavity, a bottom portion and at least one bending portion which is connected to and protrudes from the bottom portion. 
     
     
         11 . The multilayer three-dimensional circuit structure as claimed in  claim 10 , wherein the insulating layer has a second three-dimensional surface, and a shape of the second three-dimensional surface is similar to a shape of the first three-dimensional surface. 
     
     
         12 . The multilayer three-dimensional circuit structure as claimed in  claim 11 , wherein the second three-dimensional circuit structure is disposed on a third three-dimensional surface of the insulating layer opposite to the second three-dimensional surface. 
     
     
         13 . The multilayer three-dimensional circuit structure as claimed in  claim 12 , wherein a material of the insulating layer comprises an insulating material having a plurality of catalyst particles. 
     
     
         14 . The multilayer three-dimensional circuit structure as claimed in  claim 13 , wherein the second three-dimensional circuit structure is disposed on a laser activated region of the third three-dimensional surface, and the catalyst particles in the laser activated region are exposed. 
     
     
         15 . The multilayer three-dimensional circuit structure as claimed in  claim 12 , wherein a material of the three-dimensional insulating structure comprises an insulating material having a plurality of catalyst particles. 
     
     
         16 . The multilayer three-dimensional circuit structure as claimed in  claim 15 , wherein the first three-dimensional circuit structure is disposed on a laser activated region of the first three-dimensional surface, and the catalyst particles in the laser activated region are exposed.