Method of manufacturing capacitor element

Abstract

There are provided a porous plate dielectric substance, pillar-shaped electrodes respectively formed in pores belonging to a first group and pores belonging to a second group alternately arranged on the dielectric substance, insulator layers made of an organic insulator formed on tips of pillar-shaped electrodes in the pores of the first and second groups so as to fill the pores and hide electrodes respectively provided on one principal surface and another principal surface of the dielectric substance and connected to base ends of the pillar-shaped electrodes.

1 . A method of manufacturing a capacitor element, comprising:
 forming micro concave portions at plural positions on one principal surface of a foil of a first valve metal by indentation;   forming a porous plate dielectric substance by performing anodic oxidation to the foil of the valve metal and by forming, on one principal surface side of the dielectric substance, concave portions belonging to a first group having a determinable depth at positions in which the micro concave portions are formed and by forming, on the one principal surface side of the dielectric substance, concave portions belonging to a second group having a depth shallower than the concave portions belonging to the first group at positions between the plural positions in which the micro concave portions are formed by performing anodic oxdidation;   forming a seed layer at inner surfaces of the concave portions belonging to the first group of the dielectric substance and at inner surfaces of the concave portions belonging to the second group by electroless deposition as well as forming a first hide electrode on the one principal surface of the dielectric substance;   forming plural pores belonging to a first group opening at another principal surface side of the dielectric substance by removing bottom portions of the concave portions belonging to the first group of the dielectric substance by etching;   forming first pillar-shaped electrodes on the seed layer in the pores belonging to the first group by electrolytic plating, leaving tips of the pores of the another principal surface side of the dielectric substance;   forming plural pores belonging a second group opening at the another principal surface side of the dielectric substance by removing bottom portions of the concave portions belonging to the second group in the dielectric substance by etching;   forming electroconductive polymer layers on the tips of the first pillar-shaped electrodes in the pores belonging to the first group and on the first hide electrode in the pores belonging to the second group so as to fill the pores respectively by electropolymerization;   forming second pillar-shaped electrodes on the seed layer at inner surfaces of the pores belonging to the second group by electrolytic plating as well as forming a second hide electrode on the another principal surface of the dielectric substance;   forming an insulator layer by pyrolyizing each electroconductive polymer layer to be insulated; and   burning off short-circuit points between the tips of the first pillar-shaped electrodes and the second hide electrode and between the tips of the second pillar-shaped electrodes and the first hide electrodes by applying voltage.   
     
     
         2 . A method of manufacturing a capacitor element, comprising:
 forming micro concave portions at plural positions on one principal surface of a foil of a first valve metal by indentation;   forming a porous plate dielectric substance by performing anodic oxidation to the foil of the valve metal and by forming, on one principal surface side of the dielectric substance, concave portions belonging to a first group having a determinable depth at positions in which the micro concave portions are formed and by forming, on the one principal surface side of the dielectric substance, concave portions belonging to a second group having a depth shallower than the concave portions belonging to the first group at positions between the plural positions in which the micro concave portions are formed;   forming plural pores belonging to a first group opening at another principal surface side of the dielectric substance by removing bottom portions of concave portions belonging to the first group of the dielectric substance by etching;   forming a first feeding power electrode on the one principal surface on which concave portions belonging to the second group of the dielectric substance are formed;   forming first pillar-shaped electrodes in the pores belonging to the first group by electrolytic plating, leaving tips of the pores of the another principal surface side of the dielectric substance;   forming an insulator layer on the tips of the first pillar-shaped electrodes in the pores belonging to the first group so as to fill the pores respectively;   forming plural pores belonging to a second group opening at the another principal surface side of the dielectric substance by removing the first feeding power electrode on the one principal surface of the dielectric substance and bottom portions of the concave portions belonging to the second group by etching;   forming a second hide electrode on the another principal surface of the dielectric substance;   forming second pillar-shaped electrodes on the second hide electrode in the pores belonging to the second group by electrolytic plating, leaving tips of the pores of the one principal surface side of the dielectric substance;   forming an insulator layer on the tips of the second pillar-shaped electrodes in the pores belonging to the second group so as to fill the pores; and   forming a first hide electrode on the one principal surface of the dielectric substance so as to touch base ends of the first pillar-shaped electrodes.   
     
     
         3 . The method of manufacturing the capacitor element according to  claim 2 ,
 wherein, in the step of forming the insulator layer on the tips of the first pillar-shaped electrodes and the step of forming the insulator layer on the tips of the second pillar-shaped electrodes, electroconductive polymer films are formed by using the first feeding power electrode and the second feeding power electrode as feeding power layers respectively, and then the films are insulated by pyrolysis.   
     
     
         4 . The method of manufacturing the capacitor element according to  claim 2 ,
 wherein, in the step of forming the insulator layer on the tips of the first pillar-shaped electrodes and the step of forming the insulator layer on the tips of the second pillar-shaped electrodes, TiO 2  electrodeposited films are formed by using the first feeding power electrode and the second hide electrode as feeding power electrodes respectively, and then the films are insulated by performing heat treatment.   
     
     
         5 . The method of manufacturing the capacitor element according to  claim 2 ,
 wherein, in the step of forming the insulator layer on the tips of the first pillar-shaped electrodes and the step of forming the insulator layer on the tips of the second pillar-shaped electrodes, SiO 2  layers are formed by electrolytic plating by using the first feeding power electrode and the second hide electrode as feeding power layers respectively.   
     
     
         6 . The method of manufacturing the capacitor element according to  claim 2 ,
 wherein, in the step of forming the insulator layer on the tips of the first pillar-shaped electrodes and the step of forming the insulator layer on the tips of the second pillar-shaped electrodes, Sn—Pd plating layers are formed by using the first feeding power electrode and the second hide electrode as feeding power layers respectively, and then SiO 2  layers are wet-accumulated on the Sn—Pd plating layers.   
     
     
         7 . A method of manufacturing a capacitor element, comprising:
 forming micro concave portions at plural positions in a predetermined arrangement on one principal surface of a foil of a first valve metal by indentation;   forming a porous plate dielectric substance by performing anodic oxidation to the foil of the valve metal and by forming, on one principal surface side of the dielectric substance, concave portions belonging to a first group having a determinable depth at positions in which the micro concave portions are formed and by forming, on the one principal surface side of the dielectric substance, concave portions belonging to a second group having a depth shallower than the concave portions belonging to the first group at positions between the plural positions in which the micro concave portions are formed;   forming plural pores belonging to a first group opening at another principal surface side of the dielectric substance by removing bottom portions of the concave portions belonging to the first group of the dielectric substance by etching;   forming a first feeding power electrode on the one principal surface on which the concave portions belonging to the second group of the dielectric substance are formed;   forming first pillar-shaped electrodes on the feeding power electrode in pores belonging to the first group by electrolytic plating, leaving tips of the pores of the another principal surface side of the dielectric substance;   forming plural pores belonging to a second group opening at the another principal surface side of the dielectric substance by removing the first feeding power electrode and bottom portions of the concave portions belonging to the second group of the dielectric substance by etching;   forming an insulator layer on the tips of the first pillar-shaped electrodes in the pores belonging to the first group so as to fill the pores respectively;   forming a second hide electrode on the another principal surface of the dielectric substance;   forming second pillar-shaped electrodes on the second hide electrode in the pores belonging to the second group by electrolytic plating, leaving tips of the pores of the one principal surface side of the dielectric substance;   forming an insulator layer on the tips of the second pillar-shaped electrodes in the pores belonging to the second group so as to fill the pores respectively; and   forming a first hide electrode on the one principal surface of the dielectric substance so as to touch base ends of the first pillar-shaped electrodes.   
     
     
         8 . The method of manufacturing the capacitor element according to  claim 7 ,
 wherein, in the step of forming the insulator layer on the tips of the first electrodes, an insulating resin is buried on tips of the first pillar-shaped electrodes in the pores belonging to the first group and the pores belonging to the second group respectively, and then the insulating resin in the pores belonging to the second group is removed; and   wherein, in the step of forming the insulator layer on the tips of the second pillar-shaped electrodes, an insulating resin is buried on tips of the second pillar-shaped electrodes of the pores belonging to the second group respectively.   
     
     
         9 . The method of manufacturing the capacitor element according to  claim 7 ,
 wherein, in the step of forming the insulator layer on the tips of the first pillar-shaped electrodes, an insulating resin film is formed on the other principal surface of the tips side of the first pillar-shaped electrodes of the dielectric substance, and then the insulating resin film on the another principal surface except the inside of pores belonging to the first group is removed; and   wherein, in the step of forming the insulator layer on the tips of the second pillar-shaped electrodes, an insulating resin film is formed on the one principal surface of tips side of the second pillar-shaped electrodes of the dielectric substance, and then the insulating resin film on the one principal surface except the inside of the pores belonging to the second group is removed.   
     
     
         10 . A method of manufacturing a capacitor element, comprising:
 forming micro concave portions at plural positions on one principal surface of a foil of a first valve metal by indentation;   forming a porous plate dielectric substance by performing anodic oxidation to the foil of the valve metal and by forming, on one principal surface side of the dielectric substance, concave portions belonging to a first group having a determinable depth at positions in which the micro concave portions are formed and by forming, on the one principal surface side of the dielectric substance, concave portions belonging to a second group having a depth shallower than the concave portions belonging to the first group at positions between the plural positions in which the micro concave portions are formed;   forming plural pores belonging to a first group opening at another principal surface side of the dielectric substance by removing bottom portions of the concave portions belonging to the first group of the dielectric substance by etching;   forming a first feeding power electrode on the one principal surface on which the concave portions belonging to the second group of the dielectric substance are formed;   forming first pillar-shaped electrodes on the feeding power electrode in the pores belonging to the first group by electrolytic plating, leaving tips of the pores of the another principal surface side of the dielectric substance;   forming plural pores belonging to a second group opening at the another principal surface side of the dielectric substance by removing bottom portions of the concave portions belonging to the second group of the dielectric substance by etching;   forming a second-valve metal layer on the another principal surface of the tips side of the first pillar-shaped electrodes of the dielectric substance;   removing the second-valve metal layer on the another principal surface except the inside of pores belonging to the first group;   forming an insulator layer on the tips of the first pillar-shaped electrode in the pores belonging to the first group as well as into the plural pores belonging to the second groups by performing anodic oxidation to the second-valve metal layer using the first feeding power electrode as a feeding power layer so as to fill the pores respectively;   removing the first feeding power electrode by etching;   forming a second hide electrode on the another principal surface of the dielectric substance;   forming second pillar-shaped electrodes on the second hide electrode in the pores belonging the second group by electrolytic plating, leaving tips of the pores of the one principal surface side of the dielectric substance;   forming a second-valve metal layer on the one principal surface of the tips side of the second pillar-shaped electrodes of the dielectric substance;   removing the second-valve metal layer on the one principal surface except the inside of the pores belonging to the second group;   forming an insulator layer on the tips of the second pillar-shaped electrodes in the pores belonging to the second group so as to fill the pores respectively; and   forming a first hide electrode on the one principal surface of the dielectric substance so as to touch based ends of the first pillar-shaped electrodes by performing anodic oxidation to the second-valve metal layer by using the second hide electrode as a feeding power layer.   
     
     
         11 . A method of manufacturing a capacitor element, comprising:
 forming micro concave portions at plural positions on one principal surface of a foil of a first valve metal by indentation;   forming a porous plate dielectric substance by performing anodic oxidation to the foil of the valve metal and by forming, on one principal surface side of the dielectric substance, concave portions belonging to a first group having a determinable depth at positions in which the micro concave portions are formed and by forming, on the one principal surface side of the dielectric substance, concave portions belonging to a second group having a depth shallower than the concave portions belonging to the first group at positions between the plural positions in which the micro concave portions are formed;   forming plural pores belonging to a first group opening at another principal surface side of the dielectric substance by removing bottom portions of the concave portions belonging to the first group of the dielectric substance by etching;   forming a first feeding power electrode on the one principal surface on which the concave portions belonging to the second group of the dielectric substance are formed;   forming first pillar-shaped electrodes on the feeding power electrode in the pores belonging to the first group by electrolytic plating, leaving tips of the pores of the another principal surface side of the dielectric substance;   forming plural pores belonging to a second group opening at the another principal surface side of the dielectric substance by removing the first feeding power electrode and bottom portions of the concave portions belonging to the second group of the dielectric substance by etching;   forming a second hide electrode on the another principal surface of the dielectric substance by sputtering through air space between the tips of the first pillar-shaped electrodes and the second hide electrode;   forming second pillar-shaped electrodes on the second hide electrode in the pores belonging to the second group by electrolytic plating, leaving tips of one principal surface side of the dielectric substance; and   forming a first hide electrode connecting to base ends of the first pillar-shaped electrodes on the one principal surface of the dielectric substance by sputtering through air space between the tips of the second pillar-shaped electrodes and the first hide electrode.