Method of manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device includes: a process to form an element isolation trench on a semiconductor substrate, the element isolation trench having a crystal plane orientation that is different from a crystal plane orientation on a surface of the semiconductor substrate; a process to deposit, on the semiconductor substrate, one of a metal that promotes generation of oxygen radicals and a metal containing film that promotes generation of the oxygen radicals; a process to oxidize the semiconductor substrate; and a process to remove the one of the metal and the metal containing film.

1 . A method of manufacturing a semiconductor device, comprising:
 a process to form an element isolation trench on a semiconductor substrate, the element isolation trench having a crystal plane orientation that is different from a crystal plane orientation on a surface of the semiconductor substrate;   a process to deposit, on the semiconductor substrate, one of a metal that promotes generation of oxygen radicals and a metal containing film that promotes generation of the oxygen radicals;   a process to oxidize the semiconductor substrate; and   a process to remove the one of the metal and the metal containing film.   
     
     
         2 . The method of manufacturing the semiconductor device according to  claim 1 , further comprising:
 a process to form an insulating film in the element isolation trench after the process to remove the one of the metal and the metal containing film.   
     
     
         3 . The method of manufacturing the semiconductor device according to  claim 2 , wherein
 the metal is one of hafnium and zirconium.   
     
     
         4 . The method of manufacturing the semiconductor device according to  claim 2 , wherein
 the metal containing film is one of a metal oxide film and a metal silicate film.   
     
     
         5 . The method of manufacturing the semiconductor device according to  claim 2 , wherein
 the element isolation trench includes an angular part, and   in the process to deposit, one of the metal and the metal containing film is disposed in an area that includes at least the angular part.   
     
     
         6 . The method of manufacturing the semiconductor device according to  claim 2 , wherein
 the oxidizing process is a thermal oxidation.   
     
     
         7 . The method of manufacturing the semiconductor device according to  claim 4 , wherein
 the metal oxide film is HfO 2  and the metal silicate film is HfSiOx.   
     
     
         8 . The method of manufacturing the semiconductor device according to  claim 2 , wherein
 in the process to oxidize, an oxide film is formed on the surface of the semiconductor substrate and the element isolation trench.   
     
     
         9 . The method of manufacturing the semiconductor device according to  claim 8 , wherein
 in the process to remove, the oxide film is also removed.   
     
     
         10 . The method of manufacturing the semiconductor device according to  claim 1 , further comprising:
 a process to form an insulating film in the element isolation trench before the process to deposit one of the metal and the metal containing film.   
     
     
         11 . The method of manufacturing the semiconductor device according to  claim 10 , wherein
 the element isolation trench includes an angular part, and   in the process to deposit, the one of the metal and the metal containing film is disposed in an area that includes at least the angular part.   
     
     
         12 . The method of manufacturing the semiconductor device according to  claim 11 , wherein
 in the process to form the insulating film, the angular part is exposed.   
     
     
         13 . The method of manufacturing the semiconductor device according to  claim 10 , wherein
 the metal is one of hafnium and zirconium.   
     
     
         14 . The method of manufacturing the semiconductor device according to  claim 10 , wherein
 the metal containing film is one of a metal oxide film and a metal silicate film.   
     
     
         15 . The method of manufacturing the semiconductor device according to  claim 10 , wherein
 the process to oxidize is a thermal oxidation process.   
     
     
         16 . The method of manufacturing the semiconductor device according to  claim 14 , wherein
 the metal oxide film is HfO 2  and the metal silicate film is HfSiOx.   
     
     
         17 . The method of manufacturing the semiconductor device according to  claim 10 , wherein
 in the process to oxidize, an oxide film is formed on the surface of the semiconductor substrate and the element isolation trench.   
     
     
         18 . The method of manufacturing the semiconductor device according to  claim 17 , wherein
 in the process to remove, the oxide film is also removed.